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1. (WO2017149945) SEMICONDUCTOR SUBSTRATE COMPOSED OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SAME

Pub. No.:    WO/2017/149945    International Application No.:    PCT/JP2017/000802
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Fri Jan 13 00:59:59 CET 2017
IPC: C30B 29/36
C30B 25/20
H01L 21/205
Applicants: DENSO CORPORATION
株式会社デンソー
Inventors: SUGIYAMA Naohiro
杉山 尚宏
Title: SEMICONDUCTOR SUBSTRATE COMPOSED OF SILICON CARBIDE AND METHOD FOR MANUFACTURING SAME
Abstract:
Provided is a semiconductor substrate comprising a SiC substrate (1) and an epitaxial film (2), wherein the concentration ratio of the concentration of hydrogen of the epitaxial film (2) to the concentration of hydrogen of the SiC substrate (1) is 0.2 to 5, and preferably 0.5 to 2. This configuration is able to minimize hydrogen diffusion across the boundary between the epitaxial film (2) and SiC substrate (1) and reduction of hydrogen concentration thereat. Accordingly, the properties of a SiC semiconductor device formed with the semiconductor substrate, for example, a bipolar device such as a pn diode, can be improved.