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|1. (WO2017149925) SEMICONDUCTOR PROCESSING SHEET|
|Title:||SEMICONDUCTOR PROCESSING SHEET|
This semiconductor processing sheet 1 comprises at least a substrate 10, a semiconductor bonding layer 80, and a peeling film 30, wherein: a first surface 101 of the substrate 10 has an arithmetic mean roughness Ra from 0.01 to 0.8 µm; and if α is defined as the peeling force at the interface between the first surface 101 of the substrate 10 and a second surface 302 of the peeling film 30 and β is defined as the peeling force at the interface between a second surface 802 of the semiconductor bonding layer 80 and a first surface 301 of the peeling film 30, the value (α/β) of the ratio of α to β is 0 or greater to less than 1.0, and the peeling force β is from 10 to 1000 mN/50 mm. This semiconductor processing sheet 1 has excellent light transmissibility, and blocking is less likely to occur.