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1. (WO2017149662) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/149662    International Application No.:    PCT/JP2016/056271
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Wed Mar 02 00:59:59 CET 2016
IPC: H01L 21/66
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: KAWASAKI, Yuji
川崎 裕二
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A plurality of semiconductor elements (5) are formed on a semiconductor wafer (1). Wiring patterns for measuring film thickness (3, 4) are formed on dicing lines (6, 7) which divide the plurality of semiconductor elements (5). An SOG film (10) is formed on the semiconductor elements (5) and the wiring patterns for measuring film thickness (3, 4). The film thickness of the SOG film (10) is measured on the center part of the wiring patterns for measuring film thickness (3, 4). The wiring patterns for measuring film thickness (3, 4) are rectangular patterns for which the long sides are parallel to the dicing lines (6, 7).