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1. (WO2017149607) SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/149607    International Application No.:    PCT/JP2016/056087
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Tue Mar 01 00:59:59 CET 2016
IPC: H01L 29/861
H01L 29/868
Applicants: MITSUBISHI ELECTRIC CORPORATION
三菱電機株式会社
Inventors: MASUOKA, Fumihito
増岡 史仁
Title: SEMICONDUCTOR DEVICE
Abstract:
First p-type anode layers (2) and second p-type anode layers (3) are formed side-by-side on a drift layer (1). N-type cathode layers (5) and p-type cathode layers (6) are formed side-by-side below the drift layer (1). An n-type buffer layer (7) is formed between the drift layer (1), and the n-type cathode layers (5) and p-type cathode layers (6). The diffusion depth of the first p-type anode layers (2) is greater than the diffusion depth of the second p-type anode layers (3). The impurity concentration of the first p-type anode layers (2) is greater than the impurity concentration of the second p-type anode layers (3). The diffusion depth of the n-type cathode layers (5) is greater than the diffusion depth of the p-type cathode layers (6). The impurity concentration of the n-type cathode layers (5) is greater than the impurity concentration of the p-type cathode layers (6).