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1. (WO2017149604) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

Pub. No.:    WO/2017/149604    International Application No.:    PCT/JP2016/056067
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Tue Mar 01 00:59:59 CET 2016
IPC: H01L 21/205
C23C 16/455
H01L 21/31
H01L 21/318
Applicants: KOKUSAI ELECTRIC CORPORATION
株式会社KOKUSAI ELECTRIC
Inventors: NAKATANI Kimihiko
中谷 公彦
KAMAKURA Tsukasa
鎌倉 司
KARASAWA Hajime
柄澤 元
HARADA Kazuhiro
原田 和宏
Title: METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
Abstract:
The present invention has a step for forming a film on a substrate by performing a step for supplying the substrate with a first raw material, which contains a chemical bond between a predetermined element and nitrogen, or a chemical bond between a predetermined element and carbon, and a chemical bond between a predetermined element and hydrogen, and does not contain a chemical bond between nitrogen and hydrogen, and a step for supplying the substrate with a pseudo catalyst, which contains a group 13 element, and does not contain a chemical bond between nitrogen and hydrogen, said steps being performed overlapping each other for at least a fixed period of time. In the step for forming the film, the substrate is not supplied with a substance containing a chemical bond between nitrogen and hydrogen.