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1. (WO2017149580) SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/149580    International Application No.:    PCT/JP2016/055967
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Tue Mar 01 00:59:59 CET 2016
IPC: H01L 29/861
H01L 21/329
H01L 29/06
H01L 29/74
H01L 29/744
H01L 29/868
Applicants: HITACHI, LTD.
株式会社日立製作所
Inventors: BU Yuan
卜 渊
YOSHIMOTO Hiroyuki
吉元 広行
SHIMA Akio
島 明生
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Abstract:
The purpose of the present invention is to provide excellent effects of conduction deterioration prevention in a silicon carbide bipolar element having a mesa structure. The present invention solves the above-mentioned problem by providing: a first region wherein the concentration of a p-type impurity is higher than that of an n-type impurity, said first region being formed inside of a mesa structure; and a second region wherein the concentration of the n-type impurity is higher than that of the p-type impurity, said second region being provided along the side surfaces of the mesa structure.