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|1. (WO2017149580) SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE|
|Title:||SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE|
The purpose of the present invention is to provide excellent effects of conduction deterioration prevention in a silicon carbide bipolar element having a mesa structure. The present invention solves the above-mentioned problem by providing: a first region wherein the concentration of a p-type impurity is higher than that of an n-type impurity, said first region being formed inside of a mesa structure; and a second region wherein the concentration of the n-type impurity is higher than that of the p-type impurity, said second region being provided along the side surfaces of the mesa structure.