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1. (WO2017149253) METHOD FOR DETERMINING A SUITABLE ENERGY FOR IMPLANTATION IN A DONOR SUBSTRATE AND PROCESS FOR FABRICATING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE

Pub. No.:    WO/2017/149253    International Application No.:    PCT/FR2017/050471
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Fri Mar 03 00:59:59 CET 2017
IPC: H01L 21/66
H01L 21/762
Applicants: SOITEC
Inventors: ECARNOT, Ludovic
BEN MOHAMED, Nadia
DURET, Carine
Title: METHOD FOR DETERMINING A SUITABLE ENERGY FOR IMPLANTATION IN A DONOR SUBSTRATE AND PROCESS FOR FABRICATING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE
Abstract:
The invention relates to a method for determining a suitable energy for implantation of at least two atomic species in a donor substrate (30) to create a weakened zone (31) defining a single-crystal semiconductor layer (32) to be transferred to a receiver substrate (10), comprising the following steps: (i) forming a dielectric layer on the donor substrate (30) and/or the receiver substrate (10); (ii) co-implanting said species in the donor substrate (30); (iii) bonding the donor substrate (30) to the receiver substrate (10); (iv) detaching the donor substrate (30) along the weakened zone (31) so as to transfer the single-crystal semiconductor layer (32) and to recover a remainder (34) of the donor substrate; (v) inspecting the peripheral annulus of the remainder (34) of the donor substrate or of the receiver substrate (10) on which the single-crystal semiconductor layer (32) has been transferred in step (iv); (vi) if said annulus contains zones transferred to the receiver substrate, deducing that the implantation energy of step (ii) is too high; and (vii) if said annulus does not contain zones transferred to the receiver substrate, deducing that the implantation energy of step (ii) is suitable.