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1. (WO2017149240) METHOD FOR PREPARING SILICON AND/OR GERMANIUM NANOWIRES
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Pub. No.: WO/2017/149240 International Application No.: PCT/FR2017/050450
Publication Date: 08.09.2017 International Filing Date: 28.02.2017
IPC:
C01G 17/00 (2006.01) ,B01J 21/06 (2006.01) ,C01B 33/021 (2006.01) ,C22B 41/00 (2006.01)
[IPC code unknown for C01G 17][IPC code unknown for B01J 21/06][IPC code unknown for C01B 33/021][IPC code unknown for C22B 41]
Applicants:
COMMISSARIAT A L'ENERGIE ATOMIQUE [FR/FR]; 25, rue Leblanc Bâtiment « Le Ponant D » 75015 Paris, FR
Inventors:
CHENEVIER, Pascale; FR
REISS, Peter; FR
Agent:
GEVERS & ORES; /Sonia DIAS/ 41 avenue de Friedland 75008 Paris, FR
Priority Data:
165167929.02.2016FR
Title (EN) METHOD FOR PREPARING SILICON AND/OR GERMANIUM NANOWIRES
(FR) PROCEDE DE PREPARATION DE NANOFILS DE SILICIUM ET/OU DE GERMANIUM
Abstract:
(EN) The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, which includes the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst including a binary metal sulfide or a multinary metal sulphide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu and Zn, by means of which silicon and/or germanium nanowires are obtained; ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium, being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.
(FR) L'invention concerne un procédé de préparation d'un matériau à base de nanofils de silicium et/ou de germanium, comprenant les étapes de : i) mise en contact d'une source de silicium et/ou d'une source de germanium avec un catalyseur comprenant un sulfure de métal binaire ou un sulfure de métaux multinaire, le ou lesdits métaux étant choisis parmi Sn, In, Bi, Sb, Ga, Ti, Cu, et Zn, ce par quoi on obtient des nanofils de silicium et/ou de germanium, ii) éventuellement récupération des nanofils de silicium et/ou de germanium obtenus à l'étape (i); le catalyseur, et éventuellement la source de silicium et/ou la source de germanium, étant chauffé avant, pendant et/ou après la mise en contact dans des conditions de température et de pression permettant la croissance des nanofils de silicium et/ou de germanium.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: French (FR)
Filing Language: French (FR)