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1. (WO2017149205) A PLASMA ETCH-RESISTANT FILM AND A METHOD FOR ITS FABRICATION

Pub. No.:    WO/2017/149205    International Application No.:    PCT/FI2017/050141
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Sat Mar 04 00:59:59 CET 2017
IPC: C23C 16/455
C23C 16/44
H01J 37/32
Applicants: BENEQ OY
Inventors: SOININEN, Pekka J.
VORSA, Vasil
AMEEN, Mohammad
Title: A PLASMA ETCH-RESISTANT FILM AND A METHOD FOR ITS FABRICATION
Abstract:
The invention relates to a method for fabricating a plasma etch-resistant film (1) on a surface of a substrate (2), wherein the method comprises the step of forming a film comprising an intermediate layer (4) of rare earth metal oxide, rare earth metal carbonate, or rare earth metal oxycarbonate, or anymixture thereof on a first layer (3) of rare earth metal oxide, wherein the rare earth metal is the same in the first layer and in the intermediate layer. The invention further relates to a plasma etch-resistant film and to the use thereof.