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|1. (WO2017149009) METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER|
|Applicants:||ASML NETHERLANDS B.V.
|Inventors:||VAN LEEST, Adriaan, Johan
HINNEN, Paul, Christiaan
MC NAMARA, Elliott, Gerard
CRAMER, Hugo, Augustinus, Joseph
DE LA FUENTE VALENTIN, Maria, Isabel
VAN WITTEVEEN, Koen
ZAAL, Martijn, Maria
|Title:||METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER|
A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.