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1. WO2017148996 - METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER

Publication Number WO/2017/148996
Publication Date 08.09.2017
International Application No. PCT/EP2017/054737
International Filing Date 01.03.2017
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G01B 3/14
GPHYSICS
01MEASURING; TESTING
BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
3Instruments as specified in the subgroups and characterised by the use of mechanical measuring means
14Templates for checking contours
G01N 2021/8887
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
8887based on image processing techniques
G01N 21/8851
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
G01N 21/9501
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
84Systems specially adapted for particular applications
88Investigating the presence of flaws or contamination
95characterised by the material or shape of the object to be examined
9501Semiconductor wafers
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 7/70683
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70683using process control mark, i.e. specific mark designs
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • VAN LEEST, Adriaan, Johan
  • TSIATMAS, Anagnostis
  • HINNEN, Paul, Christiaan
  • MC NAMARA, Elliott, Gerard
  • VERMA, Alok
  • THEEUWES, Thomas
  • CRAMER, Hugo, Augustinus, Joseph
Agents
  • BROEKEN, Petrus
Priority Data
62/301,88001.03.2016US
62/435,63016.12.2016US
62/435,64916.12.2016US
62/435,66216.12.2016US
62/435,67016.12.2016US
62/458,93214.02.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND APPARATUS TO DETERMINE A PATTERNING PROCESS PARAMETER
(FR) PROCÉDÉ ET APPAREIL POUR DÉTERMINER UN PARAMÈTRE DE TRAITEMENT DE MODÉLISATION
Abstract
(EN)
A method of configuring a parameter determination process, the method including: obtaining a mathematical model of a structure, the mathematical model configured to predict an optical response when illuminating the structure with a radiation beam and the structure having geometric symmetry at a nominal physical configuration; using, by a hardware computer system, the mathematical model to simulate a perturbation in the physical configuration of the structure of a certain amount to determine a corresponding change of the optical response in each of a plurality of pixels to obtain a plurality of pixel sensitivities; and based on the pixel sensitivities, determining a plurality of weights for combination with measured pixel optical characteristic values of the structure on a substrate to yield a value of a parameter associated with change in the physical configuration, each weight corresponding to a pixel.
(FR)
L'invention concerne un procédé de configuration d'un processus de détermination de paramètre, le procédé consistant en : l'obtention d'un modèle mathématique d'une structure, le modèle mathématique configuré pour prédire une réponse optique lors de l'éclairage de la structure au moyen d'un faisceau de rayonnement, et la structure ayant une symétrie géométrique au niveau d'une configuration physique nominale ; l'utilisation, par un système informatique matériel, du modèle mathématique pour simuler une perturbation dans la configuration physique de la structure d'une certaine amplitude pour déterminer un changement correspondant de réponse optique dans chacun d'une pluralité de pixels pour obtenir une pluralité de sensibilités de pixel ; et, sur la base des sensibilités de pixel, la détermination d'une pluralité de pondérations pour une combinaison avec des valeurs de caractéristique optique de pixel mesurées de la structure sur un substrat pour obtenir une valeur d'un paramètre associée à un changement de configuration physique, chaque pondération correspondant à un pixel.
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