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1. (WO2017148608) METHOD FOR CHARACTERIZING SEMICONDUCTOR MATERIALS
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/148608 International Application No.: PCT/EP2017/050945
Publication Date: 08.09.2017 International Filing Date: 18.01.2017
Chapter 2 Demand Filed: 21.12.2017
IPC:
C30B 25/16 (2006.01) ,C30B 29/40 (2006.01) ,C30B 29/46 (2006.01) ,H01L 21/00 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
16
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
46
Sulfur-, selenium- or tellurium-containing compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applicants:
NASP III/V GMBH [DE/DE]; Am Knechtacker 19 35041 Marburg, DE
Inventors:
VOLK, Michael; DE
Agent:
RICHARDT PATENTANWÄLTE PARTG MBB; Wilhelmstraße 7 65185 Wiesbaden, DE
Priority Data:
10 2016 203 298.401.03.2016DE
Title (EN) METHOD FOR CHARACTERIZING SEMICONDUCTOR MATERIALS
(FR) PROCÉDÉ DE CARACTÉRISATION DE MATÉRIAUX SEMICONDUCTEURS
(DE) VERFAHREN ZUR CHARAKTERISIERUNG VON HALBLEITERMATERIALIEN
Abstract:
(EN) The invention relates to a method for characterizing semiconductor materials during the growing of a desired mixed crystal (101) of a compound semiconductor on a substrate (100) with a predefined growth rate, the method including the determining of the material composition of the desired mixed crystal (101) by measuring the change in the curvature of the substrate over time during growing, wherein the proportion of the components in the desired mixed crystal (101) is determined from the change in curvature over time.
(FR) L'invention concerne un procédé de caractérisation de matériaux semiconducteurs durant la croissance d'un cristal mixte (101) souhaité d'un semiconducteur composé sur un substrat (100) avec un taux de croissance prédéfini, ledit procédé comprenant une détermination de la composition du cristal mixte (101) souhaité par la mesure de la variation dans le temps de la courbure du substrat durant la croissance, la proportion des constituants dans le cristal mixte (101) souhaité étant déterminée à partir de la variation dans le temps de ladite courbure.
(DE) Die Erfindung betrifft ein Verfahren zur Charakterisierung von Halbleitermaterialien während dem Aufwachsen eines gewünschten Mischkristalls (101) eines Verbindungshalbleiters auf ein Substrat (100) mit einer vorgegebenen Wachstumsrate, wobei das Verfahren eine Bestimmung der Materialzusammensetzung des gewünschten Mischkristalls (101) durch Messen der zeitlichen Änderung der Krümmung des Substrats während dem Aufwachsen umfasst, wobei aus der zeitlichen Änderung der Krümmung der Anteil der Komponenten im gewünschten Mischkristall (101) bestimmt wird.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)