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1. (WO2017148476) COMPONENT IN ALGAINN SYSTEM COMPRISING A TUNNEL JUNCTION

Pub. No.:    WO/2017/148476    International Application No.:    PCT/DE2017/100165
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Fri Mar 03 00:59:59 CET 2017
IPC: H01L 21/02
H01L 29/88
H01L 29/20
H01L 31/0687
H01L 33/04
Applicants: OTTO-VON-GUERICKE-UNIVERSITÄT MAGDEBURG, TTZ PATENTWESEN
Inventors: DADGAR, Armin
STRITTMATTER, Andre
Title: COMPONENT IN ALGAINN SYSTEM COMPRISING A TUNNEL JUNCTION
Abstract:
The invention relates to an AlGaInN-based semiconductor component and to a structural element module consisting thereof, containing a tunnel diode (1, 2, 3, 4), which in turn comprises an n-doped, electrically conductive layer having an electron concentration ≥ 1x1019 cm-3 and a p-doped, electrically conductive layer having a hole concentration ≥ 7x1017 cm-3, characterised by foreign atoms that generate deep imperfections in at least one sub-region of the depletion region, said sub-region forming in the contact region of the p- and n-type layers and having an area concentration of deep imperfections >6x1011cm-2, said imperfections generating at least one energetic state below the energy level of the n-type dopant or above the energy level of the p-type dopant within the energy gap of the respective material.