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1. (WO2017148107) CARBON NANOTUBE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2017/148107 International Application No.: PCT/CN2016/095616
Publication Date: 08.09.2017 International Filing Date: 17.08.2016
IPC:
H01L 29/786 (2006.01) ,H01L 29/43 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
PEKING UNIVERSITY [CN/CN]; No. 5 Yiheyuan Road, Haidian District Beijing 100871, CN
Inventors:
LIANG, Xuelei; CN
HUI, Guanbao; CN
TIAN, Boyuan; CN
ZHANG, Fangzhen; CN
ZHAO, Haiyan; CN
XIA, Jiye; CN
YAN, Qiuping; CN
PENG, Lianmao; CN
Agent:
TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS; Yuan Chen 10th Floor, Tower D, Minsheng Financial Center 28 Jianguomennei Avenue Dongcheng District, Beijing 100005, CN
Priority Data:
201610115033.X01.03.2016CN
Title (EN) CARBON NANOTUBE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
(FR) TRANSISTOR EN COUCHES MINCES À NANOTUBE DE CARBONE ET SON PROCÉDÉ DE FABRICATION
Abstract:
(EN) A carbon nanotube thin film transistor and the manufacturing method thereof. The carbon nanotube thin film transistor includes a source electrode (1), a drain electrode (2), a channel region, a plurality of protrusions (3), and a carbon nanotube layer. The channel region is between the source electrode (1) and the drain electrode (2). The plurality of protrusions (3) are at, and extend in a length direction of, the channel region. The carbon nanotube layer is disposed over the plurality of protrusions (3), and comprises a plurality of carbon nanotubes (4).
(FR) L’invention concerne un transistor en couches minces à nanotube de carbone et son procédé de fabrication. Le transistor en couches minces à nanotube de carbone comprend une électrode de source (1), une électrode de drain (2), une région de canal, une pluralité de saillies (3), et une couche de nanotube de carbone. La région de canal est située entre l’électrode de source (1) et l’électrode de drain (2). La pluralité de saillies (3) se trouvent au niveau de la région de canal et s’étendent dans une direction de longueur de la région de canal. La couche de nanotube de carbone est disposée sur la pluralité de saillies (3), et comprend une pluralité de nanotubes de carbone (4).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)