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1. (WO2017148007) METAL OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/148007 International Application No.: PCT/CN2016/082315
Publication Date: 08.09.2017 International Filing Date: 17.05.2016
IPC:
H01L 29/786 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
武汉华星光电技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD [CN/CN]; 中国湖北省武汉市 东湖开发区高新大道666号生物城C5栋 Building C5, Biolake of Optics Valley, No.666 Gaoxin Avenue, East Lake High-tech Development Zone Wuhan, Hubei 430070, CN
Inventors:
谢应涛 XIE, Yingtao; CN
Agent:
深圳市铭粤知识产权代理有限公司 MING & YUE INTELLECTUAL PROPERTY LAW FIRM; 中国广东省深圳市南山区南山街道前海路泛海城市广场2栋604室 Room 604 Building 2, Oceanwide City Square, Qianhai Road, Nanshan Street, Nanshan District Shenzhen, Guangdong 518066, CN
Priority Data:
201610124804.104.03.2016CN
Title (EN) METAL OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR
(FR) TRANSISTOR À FILM MINCE D'OXYDE DE MÉTAL ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 金属氧化物薄膜晶体管及其制备方法
Abstract:
(EN) A metal oxide thin film transistor and a manufacturing method therefor. The preparation method comprises the steps of: providing a substrate (1); sequentially forming a buffer layer (2), an oxide film layer (31), a gate insulation layer (4) and a first metal layer (51) on the substrate (1); adopting a photomask to respectively pattern the first metal layer (51), the gate insulation layer (4) and the oxide film layer (31) so as to form a gate (52), a patterned gate insulation layer (4) and an oxide active layer (32). In the manufacturing method, the method of firstly depositing and then respectively etching is adopted for film layer structures such as an oxide active layer and a gate, and a patterning processing procedure for the film layer structures such as the oxide active layer and the gate can be completed by using one photomask only. Since the number of used photomasks can be reduced, a manufacturing procedure of a process can be simplified, the process time is saved and the production cost is reduced effectively.
(FR) L'invention concerne un transistor à film mince d'oxyde de métal et son procédé de fabrication. Le procédé de préparation comprend les étapes consistant à : fournir un substrat (1) ; former séquentiellement une couche tampon (2), une couche de film d'oxyde (31), une couche d'isolation de grille (4) et une première couche métallique (51) sur le substrat (1) ; à adopter un photomasque afin de former un motif respectif à partir de la première couche métallique (51), de la couche d'isolation de grille (4) et de la couche de film d'oxyde (31) afin de former une grille (52), une couche d'isolation de grille présentant un motif (4) et une couche active d'oxyde (32). Dans le procédé de fabrication, on adopte un procédé consistant à effectuer un dépôt en premier lieu puis à effectuer une gravure respective pour des structures de couches de film telles qu'une couche active d'oxyde et une grille, et un processus de traitement de formation de motif destiné aux structures de couches de film telles que la couche active d'oxyde et la grille peut être mis en oeuvre au moyen d'un seul photomasque. Le nombre réduit de photomasques utilisés permet de simplifier la méthode de fabrication d'un traitement, de réduire le temps de traitement et de réduire efficacement les coûts de production.
(ZH) 一种金属氧化物薄膜晶体管及其制造方法,该制备方法包括以下步骤:提供一基板(1);在基板(1)上依次形成缓冲层(2)、氧化物膜层(31)、栅极绝缘层(4)和第一金属层(51);采用一道光罩分别对第一金属层(51)、栅极绝缘层(4)、氧化物膜层(31)进行图形化处理,形成栅极(52)、图形化的栅极绝缘层(4)、氧化物有源层(32)。在该制造方法中,对于氧化物有源层和栅极等膜层结构,采用先沉积、后分别刻蚀的方法,仅需使用一道光罩,即可完成对氧化物有源层和栅极等膜层结构的图形化处理过程。由于能够减少使用光罩的数量,因此能够简化工艺制程、节省工艺时间,有效降低生产成本。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)