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1. (WO2017147970) COMPLEMENTARY THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR

Pub. No.:    WO/2017/147970    International Application No.:    PCT/CN2016/078753
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Sat Apr 09 01:59:59 CEST 2016
IPC: H01L 27/092
H01L 21/8238
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
Inventors: ZENG, Mian
曾勉
HSIAO, Hsiang chih
萧祥志
ZHANG, Shengdong
张盛东
Title: COMPLEMENTARY THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Abstract:
A complementary thin film transistor (100) and a manufacturing method therefor. The complementary thin film transistor (100) comprises a substrate (2), an N-type semiconductor layer (31), a P-type semiconductor layer (32), and an etching blocking layer (8). An N-type transistor region (101) and a P-type transistor region (102) that are adjacently disposed are defined by the substrate (2). The N-type semiconductor layer (31) is disposed above the substrate (2) and is located in the N-type transistor region (101), and the N-type semiconductor layer (31) comprises a metal oxide material. The P-type semiconductor layer (32) is disposed above the substrate (2) and is located in the P-type transistor region (102), and the P-type semiconductor layer (32) comprises an organic semiconductor material. The etching blocking layer (8) is formed on the N-type semiconductor layer (31) and is located in the N-type transistor region (101) and the P-type transistor region (102), and the P-type semiconductor layer (32) is formed on the etching blocking layer (8).