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1. (WO2017147768) METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE

Pub. No.:    WO/2017/147768    International Application No.:    PCT/CN2016/075071
Publication Date: Sat Sep 09 01:59:59 CEST 2017 International Filing Date: Wed Mar 02 00:59:59 CET 2016
IPC: C09G 1/02
C09G 1/04
C09G 1/00
C09K 3/14
Applicants: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.
HO, Lin-Chen
TSAI, Wei-Wen
LEE, Cheng-Ping
WANG, Jiun-Fang
Inventors: HO, Lin-Chen
TSAI, Wei-Wen
LEE, Cheng-Ping
WANG, Jiun-Fang
Title: METHOD OF CHEMICAL MECHANICAL POLISHING A SUBSTRATE
Abstract:
A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).