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1. (WO2017140083) OPTIMIZATION METHOD FOR ALIGNMENT FILM THICKNESS UNIFORMITY AND LIQUID CRYSTAL DISPLAY PANEL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/140083 International Application No.: PCT/CN2016/089745
Publication Date: 24.08.2017 International Filing Date: 12.07.2016
IPC:
G02F 1/1337 (2006.01) ,G02F 1/1362 (2006.01) ,G03F 1/32 (2012.01) ,H01L 21/77 (2017.01)
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
1333
Constructional arrangements
1337
Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26
Phase shift masks [PSM]; PSM blanks; Preparation thereof
32
Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Road, Guangming Shenzhen, Guangdong 518132, CN
Inventors:
豆婷 DOU, Ting; CN
李强 LI, Qiang; CN
Agent:
深圳市铭粤知识产权代理有限公司 MING & YUE INTELLECTUAL PROPERTY LAW FIRM; 中国广东省深圳市南山区南山街道前海路泛海城市广场2栋604室 Room 604 Building 2, Oceanwide City Square, Qianhai Road, Nanshan Street, Nanshan District Shenzhen, Guangdong 518066, CN
Priority Data:
201610091187.X18.02.2016CN
Title (EN) OPTIMIZATION METHOD FOR ALIGNMENT FILM THICKNESS UNIFORMITY AND LIQUID CRYSTAL DISPLAY PANEL
(FR) PROCÉDÉ D'OPTIMISATION POUR UNIFORMITÉ D'ÉPAISSEUR DE FILM D'ALIGNEMENT ET PANNEAU D'AFFICHAGE À CRISTAUX LIQUIDES
(ZH) 配向膜厚度均一性的优化方法及液晶显示面板
Abstract:
(EN) An optimization method for thickness uniformity of an alignment film (600). The optimization method comprises the following steps: providing a thin film transistor array substrate (2) deposited with a passivation layer (100); coating the passivation layer (100) with photoresists (200); dividing the thin film transistor array substrate (2) into different areas, and performing halftone mask exposure, ordinary mask exposure, developing and etching on photoresists (200) in different areas respectively; after etching, removing the photoresists (200), and depositing an ITO film layer (500); performing etching on the ITO film layer (500) so as to obtain the thin film transistor array substrate (2) on which the upper surface of the ITO film layer (500) and that of the passivation layer (100) are located in the same plane; and coating the upper surface of the ITO film layer (500) and that of the passivation layer (100) with an alignment film (600). According to the optimization method, as the upper surface of the ITO film layer (500) and that of the passivation layer (100) are located in the same plane, the whole alignment film spread on the upper surfaces of the ITO film layer and the passivation layer is uniform in thickness, and the display quality of the LCD panel is improved.
(FR) La présente invention concerne un procédé d'optimisation pour l'uniformité d'épaisseur d'un film d'alignement (600). Le procédé d'optimisation comprend les étapes suivantes : fourniture d'un substrat de matrice de transistors à couche mince (2) déposé avec une couche de passivation (100); revêtement de la couche de passivation (100) avec des résines photosensibles (200); division du substrat de matrice de transistors à couche mince (2) en différentes zones, et conduite d'une exposition à un masque tramé, exposition à un masque ordinaire, développement et gravure sur les résines photosensibles (200) dans différentes zones, respectivement; après la gravure, retrait des résines photosensibles (200), et dépôt d'une couche de film ITO (500); conduite d'une gravure sur la couche de film ITO (500) de façon à obtenir le substrat de matrice de transistors à couche mince (2) sur lequel la surface supérieure de la couche de film ITO (500) et celle de la couche de passivation (100) sont situées dans le même plan; et revêtement de la surface supérieure de la couche de film ITO (500) et celle de la couche de passivation (100) avec un film d'alignement (600). Selon le procédé d'optimisation, lorsque la surface supérieure de la couche de film ITO (500) et celle de la couche de passivation (100) sont situées dans le même plan, le film d'alignement total étalé sur les surfaces supérieures de la couche de film ITO et la couche de passivation présente une épaisseur uniforme, et la qualité d'affichage du panneau LCD est améliorée.
(ZH) 一种配向膜(600)厚度均一性的优化方法,包括以下步骤:提供沉积有钝化层(100)的薄膜晶体管阵列基板(2);在钝化层(100)上涂布光阻(200);将薄膜晶体管阵列基板(2)划分为不同区域,对处于不同区域的光阻(200)分别进行半色调掩膜曝光和普通掩膜曝光、显影、刻蚀;刻蚀后,去除光阻(200)、沉积ITO膜层(500);对ITO膜层(500)进行刻蚀,得到ITO膜层(500)上表面与钝化层(100)上表面处于同一平面的薄膜晶体管阵列基板(2);在ITO膜层(500)上表面和钝化层(100)上表面涂布配向膜(600)。由于ITO膜层(500)上表面与钝化层(100)上表面处于同一平面,使得涂布在其上方的整面配向膜(600)厚度均一,因而有助于提高液晶显示面板的显示品质。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)