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1. (WO2017139364) BROADBAND BACK MIRROR FOR A III-V CHIP IN SILICON PHOTONICS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/139364 International Application No.: PCT/US2017/016994
Publication Date: 17.08.2017 International Filing Date: 08.02.2017
IPC:
H01S 5/183 (2006.01) ,H01S 5/22 (2006.01) ,H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
SKORPIOS TECHNOLOGIES, INC. [US/US]; 7401 Snaproll Street NE Albuquerque, New Mexico 87109, US
Inventors:
LAMBERT, Damien; US
Agent:
CROOKSTON, Matthew B.; US
LIU, Rong; US
LARGENT, Craig; US
KILPATRICK TOWNSEND & STOCKTON LLP; Mailstop - IP Docketing 22 1100 Peachtree St. Suite 2800 Atlanta, GA 30309, US
LINDEMANN, John; US
Priority Data:
15/426,36607.02.2017US
15/426,37507.02.2017US
15/426,82307.02.2017US
62/292,63308.02.2016US
62/292,63608.02.2016US
62/292,67508.02.2016US
Title (EN) BROADBAND BACK MIRROR FOR A III-V CHIP IN SILICON PHOTONICS
(FR) MIROIR ARRIÈRE À LARGE BANDE POUR PUCE III-V DANS DE LA PHOTONIQUE DE SILICIUM
Abstract:
(EN) A semiconductor laser has a mirror formed in a gain chip. The mirror can be placed in the gain chip to provide a broadband reflector to support multiple lasers using the gain chip. The mirror can also be placed in the gain chip to have the semiconductor laser be more efficient or more powerful by changing an optical path length of the gain of the semiconductor laser.
(FR) Laser à semi-conducteurs comportant un miroir formé dans une puce de gain. Le miroir peut être placé dans la puce de gain pour fournir un réflecteur à large bande afin de supporter de multiples lasers à l'aide de la puce de gain. Le miroir peut également être placé dans la puce de gain pour que le laser semi-conducteurs soit plus efficace ou plus puissant par la modification d'une longueur de trajet optique du gain du laser semi-conducteurs.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN108886236EP3414806