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1. (WO2017139286) IMPROVED VERTICAL THYRISTOR MEMORY WITH MINORITY CARRIER LIFETIME REDUCTION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/139286 International Application No.: PCT/US2017/016865
Publication Date: 17.08.2017 International Filing Date: 07.02.2017
IPC:
H01L 27/08 (2006.01) ,H01L 27/102 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
102
including bipolar components
Applicants:
KILOPASS TECHNOLOGY, INC. [US/US]; 2895 Zanker Road San Jose, CA 95134, US
Inventors:
CHENG, Charlie; US
AXELRAD, Valery; US
LUAN, Harry; US
Agent:
FEUSTEL, Richard, M.; US
YIN, Shong; US
Priority Data:
15/199,91630.06.2016US
15/199,93430.06.2016US
62/292,54708.02.2016US
62/294,23911.02.2016US
62/294,27011.02.2016US
62/300,01525.02.2016US
Title (EN) IMPROVED VERTICAL THYRISTOR MEMORY WITH MINORITY CARRIER LIFETIME REDUCTION
(FR) MÉMOIRE AMÉLIORÉE À THYRISTORS VERTICAUX AVEC RÉDUCTION DE LA DURÉE DE VIE DES PORTEURS MINORITAIRES
Abstract:
(EN) Apparatus and methods for reducing minority carriers in a memory array are described herein. Minority carriers diffuse between ON cells and OFF cells, causing disturbances during write operation as well as reducing the retention lifetime of the cells. Minority Carrier Lifetime Killer (MCLK) region architectures are described for vertical thyristor memory arrays with insulation trenches. These MCLK regions encourage recombination of minority carriers. In particular, MCLK regions formed by conductors embedded along the cathode line of a thyristor array, as well as dopant MCLK regions are described, as well as methods for manufacturing thyristor memory cells with MCLK regions.
(FR) L'invention concerne des appareils et des procédés pour réduire des porteurs minoritaires dans un réseau de mémoire. Des porteurs minoritaires se diffusent entre des cellules MARCHE et des cellules ARRET, provoquant des perturbations pendant une opération d'écriture ainsi qu'une réduction de la durée de vie de rétention des cellules. Des architectures de région tueuse à durée de vie de porteur minoritaire (MCLK) sont décrites pour des réseaux de mémoire à thyristors verticaux avec des tranchées d'isolation. Ces régions MCLK favorisent la recombinaison de porteurs minoritaires. En particulier, des régions MCLK formées par des conducteurs noyés le long de la ligne de cathode d'un réseau de thyristors, ainsi que des régions MCLK dopantes sont décrites, ainsi que des procédés pour fabriquer des cellules de mémoire à thyristors avec des régions MCLK.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)