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1. WO2017138951 - MEMORY DEVICES WITH VOLATILE AND NON-VOLATILE BEHAVIOR

Publication Number WO/2017/138951
Publication Date 17.08.2017
International Application No. PCT/US2016/017693
International Filing Date 12.02.2016
IPC
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
54
using elements simulating biological cells, e.g. neuron
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
15
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
G11C 11/54 (2006.01)
G11C 15/00 (2006.01)
CPC
G06N 3/063
G11C 11/54
G11C 11/5685
G11C 13/0002
G11C 13/0011
G11C 2213/77
Applicants
  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive West Houston, Texas 77070, US
Inventors
  • LI, Zhiyong; US
  • ZHANG, Lu; US
  • ZHANG, Minxian; US
Agents
  • WARD, Aaron S.; US
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MEMORY DEVICES WITH VOLATILE AND NON-VOLATILE BEHAVIOR
(FR) DISPOSITIFS DE MÉMOIRE AYANT UN COMPORTEMENT VOLATILE ET NON VOLATILE
Abstract
(EN)
An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.
(FR)
Selon un aspect, la présente invention concerne un dispositif donné à titre d'exemple comprenant une couche d'oxyde actif pour former et dissiper un pont conducteur. Le pont conducteur doit se dissiper spontanément dans un temps de relaxation pour permettre au dispositif de mémoire de se régénérer automatiquement en fonction du comportement volatile en réponse à la tension électrique d'entrée étant inférieure à un seuil correspondant sans tenir compte du courant de fuite et le bruit d'un réseau crossbar dans lequel le dispositif de mémoire doit fonctionner. Le pont conducteur doit perdurer au-delà du temps de relaxation pour permettre au dispositif de mémoire de retenir la programmation d'apprentissage informatique neuromorphique selon le comportement non volatile du dispositif de mémoire en réponse à la tension électrique d'entrée n'étant pas inférieure au seuil.
Also published as
Latest bibliographic data on file with the International Bureau