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1. (WO2017138951) MEMORY DEVICES WITH VOLATILE AND NON-VOLATILE BEHAVIOR

Pub. No.:    WO/2017/138951    International Application No.:    PCT/US2016/017693
Publication Date: Fri Aug 18 01:59:59 CEST 2017 International Filing Date: Sat Feb 13 00:59:59 CET 2016
IPC: G11C 11/54
G11C 15/00
Applicants: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventors: LI, Zhiyong
ZHANG, Lu
ZHANG, Minxian
Title: MEMORY DEVICES WITH VOLATILE AND NON-VOLATILE BEHAVIOR
Abstract:
An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.