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1. (WO2017138697) SEMICONDUCTOR LIGHT-EMITTING DEVICE FOR ULTRAVIOLET CURING
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/138697 International Application No.: PCT/KR2016/015464
Publication Date: 17.08.2017 International Filing Date: 29.12.2016
IPC:
H01L 33/50 (2010.01) ,H01L 33/52 (2010.01) ,H01L 33/26 (2010.01) ,H01L 33/04 (2010.01) ,H01L 33/06 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants:
주식회사 소프트에피 SOFT-EPI INC. [KR/KR]; 경기도 용인시 처인구 백암면 고안로51번길 175-28 405 405 175-28, Goan-ro 51beon-gil, Baegam-myeon, Cheoin-gu Yongin-si Gyeonggi-do 17180, KR
Inventors:
황성민 HWANG, Sung Min; KR
박중서 PARK, Joong Seo; KR
조인성 CHO, In Sung; KR
임원택 LIM, Won Taeg; KR
신선혜 SHIN, Sun Hye; KR
김두수 KIM, Doo Soo; KR
이성현 LEE, Seong Hyeon; KR
Agent:
안상정 AN, Sang Jeong; KR
Priority Data:
10-2016-001550811.02.2016KR
Title (EN) SEMICONDUCTOR LIGHT-EMITTING DEVICE FOR ULTRAVIOLET CURING
(FR) DISPOSITIF D’ÉMISSION DE LUMIÈRE À SEMI-CONDUCTEURS POUR UN DURCISSEMENT AUX ULTRAVIOLETS
(KO) 자외선 경화를 위한 반도체 발광소자
Abstract:
(EN) Disclosed is a semiconductor light-emitting device for ultraviolet curing, comprising: a semiconductor light-emitting device chip including an active layer and emitting, at an active layer, light including ultraviolet rays; and an encapsulant covering at least a part of the semiconductor light-emitting device chip and comprising a wavelength conversion material for allowing a color different from the light coming from the semiconductor light-emitting device chip to be emitted in response to the light coming from the semiconductor light-emitting device chip, wherein 50% or more of the light emitted from the semiconductor light-emitting device chip is used for ultraviolet curing.
(FR) L’invention concerne un dispositif d’émission de lumière à semi-conducteurs pour un durcissement aux ultraviolets, comprenant : une puce de dispositif d’émission de lumière à semi-conducteurs comprenant une couche active et émettant, au niveau d’une couche active, une lumière comprenant des rayons ultraviolets ; et un agent d’encapsulation recouvrant au moins une partie de la puce de dispositif d’émission de lumière à semi-conducteurs et comprenant un matériau de conversion de longueur d’onde pour permettre à une couleur différente de la lumière provenant de la puce de dispositif d’émission de lumière à semi-conducteurs d’être émise en réponse à la lumière provenant de la puce de dispositif d’émission de lumière à semi-conducteurs, 50 % ou plus de la lumière émise à partir de la puce de dispositif d’émission de lumière à semi-conducteurs étant utilisé pour un durcissement aux ultraviolets.
(KO) 본 개시는, 자외선 경화를 위한 반도체 발광소자에 있어서, 활성층을 포함하는 반도체 발광소자 칩;으로서, 활성층에서 자외선을 포함하는 광을 발광하는 반도체 발광소자 칩; 그리고, 반도체 발광소자 칩의 적어도 일부를 덮고 있는 봉지재;로서, 반도체 발광소자 칩에서 나오는 광에 반응하여 반도체 발광소자 칩에서 나오는 광과 다른 색을 발광하게 하는 파장 변환재를 포함하는 봉지재;를 포함하며, 반도체 발광소자 칩에서 발광하는 광 중에서 50% 이상은 자외선 경화에 사용되는 것을 특징으로 하는 자외선 경화를 위한 반도체 발광소자에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)