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1. (WO2017138414) SEMICONDUCTOR MODULE AND INVERTER DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/138414 International Application No.: PCT/JP2017/003572
Publication Date: 17.08.2017 International Filing Date: 01.02.2017
IPC:
H01L 25/07 (2006.01) ,H01L 23/48 (2006.01) ,H01L 25/065 (2006.01) ,H01L 25/18 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
株式会社 豊田自動織機 KABUSHIKI KAISHA TOYOTA JIDOSHOKKI [JP/JP]; 愛知県刈谷市豊田町2丁目1番地 2-1, Toyoda-cho, Kariya-shi, Aichi 4488671, JP
Inventors:
加藤 直毅 KATO, Naoki; JP
森 昌吾 MORI, Shogo; JP
Agent:
恩田 誠 ONDA, Makoto; JP
恩田 博宣 ONDA, Hironori; JP
Priority Data:
2016-02469412.02.2016JP
Title (EN) SEMICONDUCTOR MODULE AND INVERTER DEVICE
(FR) MODULE SEMI-CONDUCTEUR ET DISPOSITIF ONDULEUR
(JA) 半導体モジュール及びインバータ装置
Abstract:
(EN) This semiconductor module is provided with a first conductive plate, a first switching element mounted on the first conductive plate, a second conductive plate provided on the first switching element, a second switching element laminated on the second conductive plate, a third conductive plate provided on the second switching element, and first and second control terminals. Each of the switching elements is configured using silicon carbide. On a second lower conductive plate surface of the second conductive plate, a protruding part is provided that protrudes from said second lower conductive plate surface toward a first element upper surface and that is bonded to a first upper electrode.
(FR) Module semi-conducteur pourvu d'une première plaque conductrice, d'un premier élément de commutation monté sur la première plaque conductrice, d'une deuxième plaque conductrice disposée sur le premier élément de commutation, d'un deuxième élément de commutation stratifié sur la deuxième plaque conductrice, d'une troisième plaque conductrice disposée sur le deuxième élément de commutation, et de première et deuxième bornes de commande. Chacun des éléments de commutation est conçu à l'aide de carbure de silicium. Sur une deuxième surface de plaque conductrice inférieure de la deuxième plaque conductrice est prévue une partie saillante qui fait saillie à partir de ladite deuxième surface de plaque conductrice inférieure vers une première surface supérieure d'élément et qui est liée à une première électrode supérieure.
(JA) 半導体モジュールは、第1導電板と、第1導電板上に載置されている第1スイッチング素子と、第1スイッチング素子の上に設けられている第2導電板と、第2導電板の上に積層されている第2スイッチング素子と、第2スイッチング素子の上に設けられている第3導電板と、第1及び第2制御端子と、を備える。各スイッチング素子は、炭化ケイ素を用いて構成されている。第2導電板の第2下側導電板面には、当該第2下側導電板面から第1素子上面に向けて突出し、且つ、第1上側電極と接合されている凸部が設けられている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180103954CN108633315EP3416189