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1. (WO2017138370) SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/138370 International Application No.: PCT/JP2017/002883
Publication Date: 17.08.2017 International Filing Date: 27.01.2017
IPC:
H01L 27/14 (2006.01) ,G02B 5/20 (2006.01) ,H01L 27/146 (2006.01) ,H04N 9/07 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5
Optical elements other than lenses
20
Filters
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
9
Details of colour television systems
04
Picture signal generators
07
with one pick-up device only
Applicants:
ソニー株式会社 SONY CORPORATION [JP/JP]; 東京都港区港南1丁目7番1号 1-7-1, Konan, Minato-ku, Tokyo 1080075, JP
Inventors:
東谷 阿美 HIGASHITANI Ami; JP
大場 宣幸 OHBA Nobuyuki; JP
狭山 征博 SAYAMA Yukihiro; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2016-02232709.02.2016JP
Title (EN) SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE
(FR) ÉLÉMENT D'IMAGERIE À SEMI-CONDUCTEUR, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF ÉLECTRONIQUE
(JA) 固体撮像素子およびその製造方法、並びに電子機器
Abstract:
(EN) The present technique pertains to: a solid-state imaging element by which an expanded dynamic range can be realized, by imparting a light receiving sensitivity difference between low sensitivity pixels and high sensitivity pixels, without changing the spectral characteristics; a method for manufacturing the solid-state imaging element; and an electronic device. The solid-state imaging element is provided with a pixel array part on which two types of pixels are arrayed: high sensitivity pixels and low sensitivity pixels with different light receiving sensitivities. The low sensitivity pixels are provided with a gray filter above or below the color filter, said gray filter reducing the transmittance of light in the visible light range by a prescribed ratio. The present technique can be applied, for example, to a solid-state imaging element, etc.
(FR) La présente invention se rapporte : à un élément d'imagerie à semi-conducteurs au moyen duquel une plage dynamique élargie peut être réalisée, en conférant une différence de sensibilité de réception de lumière entre les pixels de faible sensibilité et des pixels de forte sensibilité, sans modifier les caractéristiques spectrales ; à un procédé permettant de fabriquer l'élément d'imagerie à semi-conducteurs ; et à un dispositif électronique. L'élément d'imagerie à semi-conducteurs est pourvu d'une partie de réseau de pixels sur laquelle deux types de pixels sont disposés : des pixels de forte sensibilité et des pixels de faible sensibilité ayant des sensibilités de réception de lumière différentes. Les pixels de faible sensibilité sont pourvus d'un filtre gris au-dessus du filtre coloré, ou en dessous de ce dernier, ledit filtre de gris réduisant la transmittance de la lumière dans la plage de lumière visible par un rapport prescrit. La présente technique peut être appliquée, par exemple, à un élément d'imagerie à semi-conducteur, etc.
(JA) 本技術は、低感度画素と高感度画素で分光特性を変えることなく受光感度差をつけることにより、ダイナミックレンジの拡大を実現することができるようにする固体撮像素子およびその製造方法、並びに電子機器に関する。 固体撮像素子は、受光感度の異なる高感度画素と低感度画素の2種類の画素を配列した画素アレイ部を備える。低感度画素は、可視光領域の光の透過率を所定の割合で低下させるグレイフィルタを、カラーフィルタの上側または下側に備える。本技術は、例えば、固体撮像素子等に適用できる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20190041559