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1. (WO2017138299) HIGH FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/138299 International Application No.: PCT/JP2017/001026
Publication Date: 17.08.2017 International Filing Date: 13.01.2017
IPC:
H03H 9/25 (2006.01) ,H01L 23/12 (2006.01) ,H03H 3/08 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9
Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25
Constructional features of resonators using surface acoustic waves
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
H
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
3
Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
007
for the manufacture of electromechanical resonators or networks
08
for the manufacture of resonators or networks using surface acoustic waves
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
岩本 敬 IWAMOTO, Takashi; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2016-02147408.02.2016JP
Title (EN) HIGH FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
(FR) MODULE HAUTE FRÉQUENCE ET PROCÉDÉ DE PRODUCTION ASSOCIÉ
(JA) 高周波モジュールとその製造方法
Abstract:
(EN) This high frequency module is provided with: a first electronic component (1) that is embedded in an insulating layer (2); a wiring line (3) that is connected to the first electronic component (1); and a via conductor (4) that extends in the direction perpendicular to the main surface of the insulating layer (2) and has a first part (4a) and a second part (4b). The first part (4a) of the via conductor (4) is connected to the wiring line (3); and this high frequency module is configured such that the cross-sectional area of the first part (4a) of the via conductor (4) in the direction parallel to the main surface of the insulating layer (2) is different from the cross-sectional area of the second part (4b) of the via conductor (4) in the direction parallel to the main surface of the insulating layer (2).
(FR) Le module haute fréquence de l'invention comprend : un premier composant électronique (1) qui est intégré dans une couche isolante (2); une ligne de câblage (3) qui est reliée au premier composant électronique (1); et un conducteur de trou de liaison (4) qui s'étend dans la direction perpendiculaire à la surface principale de la couche isolante (2) et qui comporte une première partie (4a) et une deuxième partie (4b). La première partie (4a) du conducteur de trou de liaison (4a) est reliée à la ligne de câblage (3); et le module haute fréquence est configuré de telle façon que la section transversale de la première partie (4a) du conducteur de trou de liaison (4) dans la direction parallèle à la surface principale de la couche isolante (2) soit différente de la section transversale de la deuxième partie (4b) du conducteur de trou de liaison (4) dans la direction parallèle à la surface principale de la couche isolante (2).
(JA) 高周波モジュールは、絶縁層(2)内に埋設された第1の電子部品(1)と、前記第1の電子部品(1)に接続される配線(3)と、前記絶縁層(2)の主面と垂直な方向に延伸し、第1の部分(4a)と第2の部分(4b)を備えたビア導電体(4)とを備え、前記ビア導電体(4)の第1の部分(4a)は前記配線(3)に接続され、前記ビア導電体(4)の第1の部分(4a)の前記絶縁層(2)の主面と平行な方向における断面積が前記ビア導電体(4)の第2の部分(4b)の前記絶縁層(2)の主面と平行な方向における断面積と異なるように構成される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)