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1. (WO2017138087) SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/138087 International Application No.: PCT/JP2016/053782
Publication Date: 17.08.2017 International Filing Date: 09.02.2016
IPC:
H01L 21/31 (2006.01) ,C23C 16/44 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
Applicants:
株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区神田鍛冶町三丁目4番地 3-4, Kandakaji-cho, Chiyoda-ku, TOKYO 1010045, JP
Inventors:
吉田 秀成 YOSHIDA, Hidenari; JP
花島 建夫 HANASHIMA, Takeo; JP
平松 宏朗 HIRAMATSU, Hiroaki; JP
Priority Data:
Title (EN) SUBSTRATE TREATMENT APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 基板処理装置および半導体装置の製造方法
Abstract:
(EN) [Problem] To improve inter-surface uniformity in film formation. [Solution] The present invention is provided with: a reaction tube having inside a treatment chamber for treating a substrate; a buffer chamber, which is formed protruding to the outer side of the reaction tube, and which supplies a treatment gas to the treatment chamber; and an opening formed at a lower end of an inner wall of the reaction tube, said inner wall facing the buffer chamber. The buffer chamber has a first nozzle chamber in which a first nozzle is disposed, and a second nozzle chamber in which a second nozzle is disposed, and on an opening portion where the second nozzle chamber and the treatment chamber are in communication with each other, a blocking section is disposed.
(FR) Le problème décrit par l'invention est d'améliorer une uniformité entre surfaces lors d'une formation de film. La solution selon la présente invention porte sur : un tube de réaction comportant intérieurement une chambre de traitement servant à traiter un substrat; une chambre tampon, qui est formée en saillie du côté extérieur du tube de réaction, et qui fournit un gaz de traitement à la chambre de traitement; et une ouverture formée au niveau d'une extrémité inférieure d'une paroi intérieure du tube de réaction, ladite paroi intérieure se trouvant en regard de la chambre tampon. La chambre tampon comporte une chambre de première buse dans laquelle est disposée une première buse, et une chambre de seconde buse dans laquelle est disposée une seconde buse, et une section de blocage qui est disposée sur une partie d'ouverture au niveau de laquelle la chambre de seconde buse et la chambre de traitement sont en communication l'une avec l'autre.
(JA) 課題 成膜の面間均一性を向上させる。 解決手段 基板を処理する処理室を内部に有する反応管と、反応管の外方に突出して形成され、処理室に処理ガスを供給するバッファ室と、バッファ室に面する反応管の内壁の下端に形成された開口部と、を備え、バッファ室は、第1ノズルが設置される第1ノズル室と、第2ノズルが設置される第2ノズル室と、を有し、開口部のうち、第2ノズル室と処理室との連通部分には遮蔽部が設置される。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180050708