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1. (WO2017137151) RECEIVER UNIT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/137151 International Application No.: PCT/EP2017/000121
Publication Date: 17.08.2017 International Filing Date: 02.02.2017
IPC:
H01L 31/167 (2006.01) ,H01L 31/0304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
16
the semiconductor device sensitive to radiation being controlled by the light source or sources
167
the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
0304
including, apart from doping materials or other impurities, only AIIIBV compounds
Applicants:
AZUR SPACE SOLAR POWER GMBH [DE/DE]; Theresienstr. 2 74072 Heilbronn, DE
Inventors:
WÄCHTER, Clemens; DE
FUHRMANN, Daniel; DE
GUTER, Wolfgang; DE
PEPER, Christoph; DE
Agent:
MÜLLER, Koch; Patentanwaltsgesellschaft mbH Maaßstraße 32/1 69123 Heidelberg, DE
Priority Data:
10 2016 001 387.709.02.2016DE
Title (DE) EMPFÄNGERBAUSTEIN
(EN) RECEIVER UNIT
(FR) MODULE DE RÉCEPTION
Abstract:
(DE) Empfängerbaustein (EM) mit einer Anzahl N zueinander in Serie geschalteter als Halbleiterdioden ausgebildete Teilspannungsquellen, sodass die Teilspannungsquellen eine Quellenspannung erzeugen, und jede der Teilspannungsquellen eine Halbleiterdiode mit einen p-n Übergang aufweist, und die Teilquellenspannungen der einzelnen Teilspannungsquellen zueinander eine Abweichung kleiner als 20% aufweisen, und zwischen jeweils zwei aufeinanderfolgenden Teilspannungsquellen eine Tunneldiode ausgebildet ist, und die Anzahl N der Teilspannungsquellen größer gleich zwei ist, und auf den ersten Stapel (ST1) Licht (L) an der Oberseite auf die Oberfläche (OB) des ersten Stapels (ST1) auftrifft und der erste Stapel (ST1) auf der Oberfläche (OB) einen ersten elektrischen Kontakt und an der Unterseite einen zweiten elektrischen Kontakt aufweist, und der Stapel auf einem Halbleitersubstrat angeordnet und das Halbleitersubstrat mit dem Stapel und einem Transistor (T) monolithisch verbunden ist, wobei der Steuereingang des Transistors (T) mit einem der beiden elektrischen Kontakte verschaltet ist.
(EN) The invention relates to a receiver unit (EM) comprising a number N of partial voltage sources embodied as semiconductor diodes connected in series, such that the partial voltage sources produce a source voltage, and each of the partial voltage sources has a semiconductor diode with a p-n-junction, and the partial source voltages of the individual partial voltage sources deviate from each other by less than 20%, a tunnel diode being embodied between every two successive partial voltage sources, and the number N of partial voltage sources being higher than two. Light (L) hits the upper side on the surface (OB) of the first stack (ST1) and the first stack (ST1) has a first electrical contact on the surface (OB) and a second electrical contact on the lower side, the stack being arranged on a semiconductor substrate and the semiconductor substrate being monolithically connected to the stack and a transistor (T), the control input of the transistor (T) being connected to one of the two electrical contacts.
(FR) L'invention concerne un module de réception (EM) comprenant un nombre N de sources de tension partielle montées en série et réalisées sous la forme de diodes à semi-conducteur de sorte que les sources de tension partielle génèrent une tension de source et chacune des sources de tension partielle comprend une diode à semi-conducteur comportant une jonction p-n, et les tension partielles des sources de tension partielle individuelles présentent entre elles un écart inférieur à 20 % et une diode à effet tunnel est formée respectivement entre deux sources de tension partielle successives et le nombre N de sources de tension partielle est supérieur à deux et, sur le premier empilement (ST1), de la lumière (L) est incidente du côté supérieur à la surface (OB) du premier empilement (ST1) et le premier empilement (ST1) comporte sur la surface (OB) un premier contact électrique et du côté inférieur un second contact électrique, et l'empilement est disposé sur un substrat à semi-conducteur et le substrat à semi-conducteur est relié à l'empilement et à un transistor (T) de façon monolithique. L'entrée de commande du transistor (T) est connectée à l'un des deux contacts électriques.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
CN108701738EP3411909