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1. (WO2017136945) ORGANOMETALLIC COMPOUND AND METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/136945 International Application No.: PCT/CA2017/050158
Publication Date: 17.08.2017 International Filing Date: 10.02.2017
Chapter 2 Demand Filed: 05.12.2017
IPC:
C07F 7/04 (2006.01) ,C23C 16/40 (2006.01) ,C23C 16/44 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
02
Silicon compounds
04
Esters of silicic acids
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
Applicants:
SEASTAR CHEMICALS INC. [CA/CA]; 10005 McDonald Park Road Sidney, British Columbia V8L 5Y2, CA
Inventors:
ODEDRA, Rajesh; CA
DONG, Cunhai; CA
CEMBELLA, Shaun; CA
Agent:
THOMPSON, Douglas B.; CA
COOPER, Michael D.; CA
Priority Data:
292064612.02.2016CA
Title (EN) ORGANOMETALLIC COMPOUND AND METHOD
(FR) COMPOSÉ ORGANOMÉTALLIQUE ET PROCÉDÉ
Abstract:
(EN) A class of organometallic compounds is provided. The compounds correspond in structure to Formula 1 (A)x-M-(OR3)4-x wherein: A is selected from the group consisting of -NR1R2, -N(R4)(CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, halo and Y; R1 and R2 are independently selected from the group consisting of H and a cyclic or acyclic alkyl group having from 1 to 8 carbon atoms, with the proviso that at least one of R1 and R2 must be other than H; R4, R5, R6 and R7 are independently selected from the group consisting of H and an acyclic alkyl group having from 1 to 4 carbon atoms; Y is selected from the group consisting of a 3- to 13-membered heterocyclic radical containing at least one nitrogen atom; R3 is a cyclic or acyclic alkyl group having from 1 to 6 carbon atoms; M is selected from the group consisting of Si, Ge, Sn, Ti, Zr and Hf; x is an integer from 1 to 3; and n is an integer from 1 to 4. Compounds of the invention may be useful as precursors in chemical phase deposition processes such as atomic layer deposition (ALD), chemical vapour deposition (CVD), plasma assisted ALD and plasma assisted CVD. Methods of low temperature vapour phase deposition of metal oxide films, such as SiO2 films, are also provided.
(FR) La présente invention concerne une classe de composés organométalliques. Les composés correspondent en termes de structure à la Formule 1, (A)x-M-(OR3)4-x, dans laquelle : A est choisi dans le groupe constitué par -NR1R2, -N(R4)(CH2)nN(R5R6), -N=C(NR4R5)(NR6R7), OCOR1, un halogéno et Y ; R1 et R2 sont indépendamment choisis dans le groupe constitué par un H et un groupe alkyle cyclique ou acyclique possédant de 1 à 8 atomes de carbone, à condition qu'au moins l'un de R1 et R2 soit autre qu'un H ; R4, R5, R6 et R7 sont indépendamment choisis dans le groupe constitué par un H et un groupe alkyle acyclique possédant de 1 à 4 atomes de carbone ; Y est choisi dans le groupe constitué par un radical hétérocyclique de 3 à 13 chaînons comprenant au moins un atome d'azote ; R3 est un groupe alkyle cyclique ou acyclique possédant de 1 à 6 atomes de carbone ; M est choisi dans le groupe constitué par le Si, le Ge, le Sn, le Ti, le Zr et l'Hf ; x est un nombre entier de 1 à 3 ; et n est un nombre entier de 1 à 4. Les composés de l'invention peuvent être utiles en tant que précurseurs dans des procédés de dépôt chimique dans une phase, tels que le dépôt de couche atomique (ALD), le dépôt chimique en phase vapeur (CVD), l'ALD assisté par plasma et le CVD assisté par plasma. Des procédés de dépôt en phase vapeur à basse température de films d'oxydes métalliques, tels que des films de SiO2, sont également décrits.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG11201806724YKR1020180116308EP3414254CN109588049