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1. (WO2017136832) III-NITRIDE LIGHT EMITTING DIODES WITH TUNNEL JUNCTIONS WAFER BONDED TO A CONDUCTIVE OXIDE AND HAVING OPTICALLY PUMPED LAYERS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/136832 International Application No.: PCT/US2017/016720
Publication Date: 10.08.2017 International Filing Date: 06.02.2017
IPC:
H01L 33/00 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/14 (2010.01) ,H01L 33/32 (2010.01) ,H01S 5/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
Applicants:
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; 1111 Franklin Street, 12th Floor Oakland, California 94607, US
Inventors:
MUGHAL, Asad J.; US
KOWSZ, Stacy J.; US
FARRELL, Robert M.; US
YONKEE, Benjamin P.; US
YOUNG, Erin C.; US
PYNN, Christopher D.; US
MARGALITH, Tal; US
SPECK, James S.; US
NAKAMURA, Shuji; US
DENBAARS, Steven P.; US
Agent:
GATES, George H.; US
Priority Data:
62/292,01505.02.2016US
62/298,26822.02.2016US
Title (EN) III-NITRIDE LIGHT EMITTING DIODES WITH TUNNEL JUNCTIONS WAFER BONDED TO A CONDUCTIVE OXIDE AND HAVING OPTICALLY PUMPED LAYERS
(FR) DIODES ÉLECTROLUMINESCENTES AU NITRURE III À JONCTIONS TUNNEL COLLÉES PAR COLLAGE DE TRANCHES À UN OXYDE CONDUCTEUR ET COMPORTANT DES COUCHES À POMPAGE OPTIQUE
Abstract:
(EN) A III-nitride optoelectronic device includes at least one n-type layer, an active region grown on or above the n-type layer, at least one p-type layer grown on or above the active region, and a tunnel junction grown on or above the p-type layer. A conductive oxide may be wafer bonded on or above the tunnel junction, wherein the conductive oxide comprises a transparent conductor and may contain light extraction features on its non-bonded face. The tunnel junction also enables monolithic incorporation of electrically-injected and optically-pumped III-nitride layers, wherein the optically-pumped III-nitride layers comprise high-indium-content III-nitride layers formed as quantum wells (QWs) that are grown on or above the tunnel junction. The optically-pumped high-indium-content III-nitride layers emit light at a longer wavelength than the electrically-injected III-nitride layers.
(FR) L'invention concerne un dispositif optoélectronique au nitrure III qui comprend au moins une couche du type n, une zone active obtenue par croissance sur ou au-dessus de la couche du type n, au moins une couche du type p obtenue par croissance sur ou au-dessus de la zone active, et une jonction tunnel obtenue par croissance sur ou au-dessus de la couche du type p. Un oxyde conducteur peut être collé par collage de tranches sur ou au-dessus de la jonction tunnel, l'oxyde conducteur comprenant un conducteur transparent et pouvant contenir des éléments d'extraction de lumière sur sa face non collée. La jonction tunnel permet également une incorporation monolithique de couches de nitrure III à injection électrique et à pompage optique, les couches de nitrure III à pompage optique comprenant des couches de nitrure III à haute teneur en indium formées sous la forme de puits quantiques (QW) qui sont obtenus par croissance sur ou au-dessus de la jonction tunnel. Les couches de nitrure III à pompage optique à haute teneur en indium émettent de la lumière à une plus grande longueur d'onde que les couches de nitrure III à injection électrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)