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1. (WO2017135767) MEMORY DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/135767 International Application No.: PCT/KR2017/001234
Publication Date: 10.08.2017 International Filing Date: 03.02.2017
IPC:
H01L 43/02 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/10 (2006.01) ,G11C 11/16 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
한양대학교 산학협력단 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY [KR/KR]; 서울시 성동구 왕십리로 222 (한양대학교내) c/o Hanyang University, 222 Wangsimni-ro Seongdong-gu Seoul 04763, KR
Inventors:
박재근 PARK, Jea Gun; KR
이두영 LEE, Du Yeong; KR
이승은 LEE, Seung Eun; KR
Agent:
김연권 KIM, Youn Gwon; KR
Priority Data:
10-2016-001508605.02.2016KR
10-2016-001513905.02.2016KR
10-2016-001515405.02.2016KR
10-2016-001517605.02.2016KR
Title (EN) MEMORY DEVICE
(FR) DISPOSITIF DE MÉMOIRE
(KO) 메모리 소자
Abstract:
(EN) Disclosed is a memory device in which a lower electrode, a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are stacked on a substrate, and a diffusion barrier is formed between the magnetic tunnel junction and the capping layer. Disclosed is a memory device in which a lower electrode, a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, a capping layer, and an upper electrode are stacked on a substrate, and the seed layer is formed of a material that allows the synthetic exchange diamagnetic layer to grow in the fcc(111) direction. Disclosed is a memory device in which a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, and a capping layer are stacked between two electrodes, the magnetic tunnel junction includes an insertion layer formed between two free layers, and at least one of the separation layer, the insertion layer, and the capping layer is formed of a material having the bcc structure. Disclosed is a memory device in which a seed layer, a synthetic exchange diamagnetic layer, a separation layer, a magnetic tunnel junction, and a capping layer are stacked between two electrodes, and the synthetic exchange diamagnetic layer includes one magnetic layer and one non-magnetic layer.
(FR) L'invention concerne un dispositif de mémoire dans lequel une électrode inférieure, une couche de germe, une couche diamagnétique d'échange synthétique, une couche de séparation, une jonction tunnel magnétique, une couche de recouvrement et une électrode supérieure sont empilées sur un substrat, et une barrière de diffusion est formée entre la jonction tunnel magnétique et la couche de recouvrement. L'invention concerne également un dispositif de mémoire dans lequel une électrode inférieure, une couche de germe, une couche diamagnétique d'échange synthétique, une couche de séparation, une jonction tunnel magnétique, une couche de recouvrement et une électrode supérieure sont empilées sur un substrat, et la couche de germe est constituée d'un matériau qui permet à la couche diamagnétique d'échange synthétique de croître dans la direction fcc(111). L'invention concerne en outre un dispositif de mémoire dans lequel une couche de germe, une couche diamagnétique d'échange synthétique, une couche de séparation, une jonction tunnel magnétique et une couche de recouvrement sont empilées entre deux électrodes, la jonction tunnel magnétique comprend une couche d'insertion formée entre deux couches libres, et au moins une couche parmi la couche de séparation, la couche d'insertion et la couche de recouvrement est constituée d'un matériau présentant la structure bcc. L'invention concerne enfin un dispositif de mémoire dans lequel une couche de germe, une couche diamagnétique d'échange synthétique, une couche de séparation, une jonction tunnel magnétique et une couche de recouvrement sont empilées entre deux électrodes, et la couche diamagnétique d'échange synthétique comprend une couche magnétique et une couche non magnétique.
(KO) 본 발명은 기판 상에 하부 전극, 시드층, 합성 교환 반자성층, 분리층, 자기 터널 접합, 캐핑층 및 상부 전극이 적층 형성되며, 자기 터널 접합과 캐핑층 사이에 확산 배리어가 형성된 메모리 소자를 제시한다. 또한, 본 발명은 기판 상에 하부 전극, 시드층, 합성 교환 반자성층, 분리층, 자기 터널 접합, 캐핑층 및 상부 전극이 적층 형성되며, 시드층은 합성 교환 반자성층이 fcc(111) 방향으로 성장되도록 하는 물질로 형성된 메모리 소자를 제시한다. 또한, 본 발명은 두개의 전극 사이에 시드층, 합성 교환 반자성층, 분리층, 자기 터널 접합 및 캐핑층이 적층 형성되며, 자기 터널 접합은 두개의 자유층 사이에 형성된 삽입층을 포함하고, 분리층, 삽입층 및 캐핑층의 적어도 하나는 bcc 구조의 물질로 형성된 메모리 소자를 제시한다. 또한, 본 발명은 두개의 전극 사이에 시드층, 합성 교환 반자성층, 분리층, 자기 터널 접합 및 캐핑층이 적층 형성되며, 합성 교환 반자성층은 각각 하나의 자성층 및 비자성층을 구비하는 메모리 소자를 제시한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)
Also published as:
CN109155360US20190043548