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1. (WO2017135644) ULTRAVIOLET LIGHT-EMITTING DEVICE AND LIGHTING SYSTEM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/135644 International Application No.: PCT/KR2017/000950
Publication Date: 10.08.2017 International Filing Date: 26.01.2017
IPC:
H01L 33/00 (2010.01) ,F21K 9/00 (2016.01) ,H01L 33/12 (2010.01) ,H01L 33/22 (2010.01) ,H01L 33/36 (2010.01) ,F21Y 101/00 (2016.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
[IPC code unknown for F21K 9]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
12
with a stress relaxation structure, e.g. buffer layer
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
F MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21
LIGHTING
Y
INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21L, F21S and F21V104
101
Point-like light sources
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 98, Huam-ro, Jung-gu Seoul 04637, KR
Inventors:
임현철 LIM, Hyun Chul; KR
한재웅 HAN, Jae Woong; KR
Agent:
김기문 KIM, Ki Moon; KR
Priority Data:
10-2016-001224901.02.2016KR
Title (EN) ULTRAVIOLET LIGHT-EMITTING DEVICE AND LIGHTING SYSTEM
(FR) DISPOSITIF ÉLECTROLUMINESCENT ULTRAVIOLET ET SYSTÈME D'ÉCLAIRAGE
(KO) 자외선 발광소자 및 조명시스템
Abstract:
(EN) An embodiment relates to an ultraviolet light-emitting device, a method for manufacturing a light-emitting device, a light-emitting device package, and a lighting device. According to the embodiment, the light-emitting device can comprise: a second electrode layer (120); a second conductive AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive AlxGa1-xN layer (0xGa1-xN layer (0
(FR) Selon un mode de réalisation, la présente invention concerne un dispositif électroluminescent ultraviolet, un procédé de fabrication du dispositif électroluminescent ultraviolet, un boîtier de dispositif électroluminescent, et un dispositif d'éclairage. Selon le mode de réalisation, le dispositif électroluminescent peut comprendre : une seconde couche d'électrode (120) ; une seconde couche semi-conductrice à base d'AlGaN (119) sur la seconde couche d'électrode (120) ; une couche active (117) sur la seconde couche semi-conductrice à base d'AlGaN (119) ; une couche de diffusion de courant (115) comprenant une première couche conductrice en AlxGa1-xN (0 < x ≤≤ 0,25) (115c) et disposée sur la couche active (117) ; et une première couche semi-conductrice à base d'AlGaN (114) disposée sur la couche de diffusion de courant (115). Une composition (x) d'Al dans la première couche conductrice en AlxGa1-xN (0 < x ≤≤ 0,25) (115c) peut être réduite vers la couche active (117) au niveau de la première couche semi-conductrice à base d'AlGaN (114).
(KO) 실시예는 자외선 발광소자, 발광소자의 제조방법, 발광소자 패키지 및 조명장치에 관한 것이다. 실시예에 따른 발광소자는 제2 전극층(120); 상기 제2 전극층(120) 상에 제2 도전형 AlGaN 계열 반도체층(119); 상기 제2 도전형 AlGaN 계열 반도체층(119) 상에 활성층(117); 제1 도전형 AlxGa1-xN층(0xGa1-xN층(0
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)
Also published as:
US20190032856