Processing

Please wait...

Settings

Settings

Goto Application

1. WO2017135330 - METAL FILM FORMING COMPOSITION AND METAL FILM FORMING METHOD

Publication Number WO/2017/135330
Publication Date 10.08.2017
International Application No. PCT/JP2017/003674
International Filing Date 01.02.2017
IPC
C23C 18/08 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02by thermal decomposition
08characterised by the deposition of metallic material
CPC
C23C 18/08
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
02by thermal decomposition
08characterised by the deposition of metallic material
Applicants
  • 学校法人工学院大学 KOGAKUIN UNIVERSITY [JP]/[JP]
Inventors
  • 永井 裕己 NAGAI, Hiroki
  • 佐藤 光史 SATO, Mitsunobu
Agents
  • 特許業務法人太陽国際特許事務所 TAIYO, NAKAJIMA & KATO
Priority Data
PCT/JP2016/05320603.02.2016JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METAL FILM FORMING COMPOSITION AND METAL FILM FORMING METHOD
(FR) COMPOSITION DE FORMATION DE FILM MÉTALLIQUE ET PROCÉDÉ DE FORMATION DE FILM MÉTALLIQUE
(JA) 金属膜形成用組成物および金属膜形成方法
Abstract
(EN)
Provided is a metal film forming composition comprising: a metal complex represented by general formula (1), general formula (2), or general formula (3); a counter anion of the metal complex; and a solvent of the metal complex. In general formulae (1)-(3), M1 and M3 each independently represent, a metal atom selected from a group consisting of Ag, Cu, Li, Ni, Mn, Zn, and Co, and M3 represents a metal atom selected from a group consisting of Cu, Ni, Mn, and Co. L11-L32 each independently represent, an NH3 ligand, an R1NH2 ligand, an OH2 ligand, or a diamine-derived ligand, and R1 represents an alkylene group. 1n, 1m, 3n, and 3m each independently represent, an integer of 0-8; 2n and 2m each independently represent, an integer of 0-4; 1n+1m is in the range of 4-8; 2n+2m is in the range of 2-4; 3n+3m is in the range of 2-8; and respectively represent integers determined in accordance with the valence of the metal atoms represented by M1-M3.
(FR)
L'invention concerne une composition de formation de film métallique comprenant : un complexe métallique représenté par la formule générale (1), la formule générale (2) ou la formule générale (3); un contre-anion du complexe métallique; et un solvant du complexe métallique. Dans les formules générales (1) à (3), M1 et M3 représentent indépendamment un atome de métal choisi dans un groupe constitué d'Ag, Cu, Li, Ni, Mn, Zn et Co, et M3 représente un atome de métal choisi dans un groupe constitué de Cu, Ni, Mn et Co. L11 à L32 représentent indépendamment un ligand NH3, un ligand R1NH2 , un ligand OH2 ou un ligand dérivé de diamine, et R1 représente un groupe alkylène. 1n, 1m, 3n et 3m représentent chacun indépendamment un entier de 0 à 8; 2n et 2m représentent chacun indépendamment un entier de 0 à 4; la somme 1n +1 m est dans la plage de 4 à 8; la somme 2n +2m est dans la plage de 2 à 4; la somme 3n + 3m est dans la plage de 2 à 8; et ils représentent respectivement des entiers déterminés conformément à la valence des atomes de métal représentés par M1 à M3.
(JA)
下記一般式(1)、一般式(2)または一般式(3)で表される金属錯体と、前記金属錯体の対アニオンと、前記金属錯体の溶剤とを含む金属膜形成用組成物。一般式(1)~一般式(3)中、MおよびMは、それぞれ独立に、Ag、Cu、Li、Ni、Mn、Zn、およびCoからなる群より選ばれる金属原子を、Mは、Cu、Ni、Mn、およびCoからなる群より選ばれる金属原子をそれぞれ表す。L11~L32は、それぞれ独立にNH配位子、RNH配位子、OH配位子、またはジアミン由来の配位子を表し、Rはアルキレン基を表す。1n、1m、3nおよび3mは、それぞれ独立に0~8の整数を表し、2nおよび2mは、それぞれ独立に0~4の整数を表し、1n+1mは4~8の範囲であり、2n+2mは2~4の範囲であり、3n+3mは2~8の範囲であり、それぞれ、M~Mで表される金属原子の価数に応じて決定される整数を表す。
Also published as
Latest bibliographic data on file with the International Bureau