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1. (WO2017135296) POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITIVE ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/135296 International Application No.: PCT/JP2017/003579
Publication Date: 10.08.2017 International Filing Date: 01.02.2017
IPC:
C23C 14/06 (2006.01) ,H01B 3/00 (2006.01) ,H01G 4/33 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3
Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
33
Thin- or thick-film capacitors
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
山▲崎▼ 久美子 YAMAZAKI, Kumiko; JP
千原 宏 CHIHARA, Hiroshi; JP
永峰 佑起 NAGAMINE, Yuki; JP
山▲崎▼ 純一 YAMAZAKI, Junichi; JP
梅田 裕二 UMEDA, Yuji; JP
Agent:
前田・鈴木国際特許業務法人 MAEDA & SUZUKI; 東京都千代田区一ツ橋2丁目5番5号 岩波書店一ツ橋ビル8階 8F, Iwanami Shoten Hitotsubashi Bldg., 5-5, Hitotsubashi 2-chome, Chiyoda-ku, Tokyo 1010003, JP
Priority Data:
2016-01747801.02.2016JP
Title (EN) POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITIVE ELEMENT
(FR) FILM MINCE DIÉLECTRIQUE POLYCRISTALLIN ET ÉLÉMENT CAPACITIF
(JA) 多結晶誘電体薄膜および容量素子
Abstract:
(EN) The purpose of the present invention is to provide a polycrystalline dielectric thin film and a capacitive element that have a large relative dielectric constant. Provided is a polycrystalline dielectric thin film that has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula Aa1Bb1OoNn (a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.
(FR) Le but de la présente invention est de fournir un film mince diélectrique polycristallin et un élément capacitif qui ont une constante diélectrique relativement importante. L'invention concerne un film diélectrique mince polycristallin qui comprend un oxynitrure de pérovskite comme composant principal. L'oxynitrure de perovskite représenté par la formule de composition Aa1Bb1OoNn (a1 + b1 + o + n =5), et la longueur de l'axe a du réseau cristallin de l'oxynitrure de pérovskite est supérieure à une valeur théorique.
(JA) 比誘電率の大きい多結晶誘電体薄膜および容量素子を提供することを目的として、主組成がペロブスカイト型酸窒化物である多結晶誘電体薄膜であって、前記ペロブスカイト型酸窒化物が組成式Aa1b1(a1+b1+o+n=5)で表され、前記ペロブスカイト型酸窒化物の結晶格子におけるa軸長が理論値よりも大きい多結晶誘電体薄膜を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180094021CN108603276EP3412793US20190019622