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1. (WO2017135294) POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/135294 International Application No.: PCT/JP2017/003577
Publication Date: 10.08.2017 International Filing Date: 01.02.2017
IPC:
H01G 4/33 (2006.01) ,C04B 35/50 (2006.01) ,H01B 3/00 (2006.01) ,H01G 4/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
33
Thin- or thick-film capacitors
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
50
based on rare earth compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3
Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4
Fixed capacitors; Processes of their manufacture
002
Details
018
Dielectrics
06
Solid dielectrics
08
Inorganic dielectrics
12
Ceramic dielectrics
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
山▲崎▼ 久美子 YAMAZAKI, Kumiko; JP
千原 宏 CHIHARA, Hiroshi; JP
永峰 佑起 NAGAMINE, Yuki; JP
山▲崎▼ 純一 YAMAZAKI, Junichi; JP
Agent:
前田・鈴木国際特許業務法人 MAEDA & SUZUKI; 東京都千代田区一ツ橋2丁目5番5号 岩波書店一ツ橋ビル8階 8F, Iwanami Shoten Hitotsubashi Bldg., 5-5, Hitotsubashi 2-chome, Chiyoda-ku, Tokyo 1010003, JP
Priority Data:
2016-01747301.02.2016JP
Title (EN) POLYCRYSTALLINE DIELECTRIC THIN FILM AND CAPACITOR ELEMENT
(FR) FILM DIÉLECTRIQUE MINCE POLYCRISTALLIN ET ÉLÉMENT CONDENSATEUR
(JA) 多結晶誘電体薄膜および容量素子
Abstract:
(EN) [Problem] To provide a polycrystalline dielectric thin film and capacitor element having a small dielectric loss tanδ. [Solution] A polycrystalline dielectric thin film, in which the main composition is a perovskite oxynitride. The perovskite oxynitride is expressed by the compositional formula AaBbOoNn (a+b+o+n = 5), where a/b > 1 and n ≥ 0.7.
(FR) Le problème décrit par l'invention est de produire [un film diélectrique mince polycristallin et un élément condensateur ayant une faible perte diélectrique tanδ. La solution selon l'invention porte sur un film diélectrique mince polycristallin, dans lequel la composition principale est un oxynitrure de pérovskite. L'oxynitrure de pérovskite est exprimée par la formule de composition AaBbOoNn (a+b+o+n = 5), où a/b > 1 et n ≥ 0,7.
(JA) 【課題】 誘電損失tanδの小さい多結晶誘電体薄膜および容量素子を提供する。 【解決手段】 主組成がペロブスカイト型酸窒化物である多結晶誘電体薄膜である。ペロブスカイト型酸窒化物が組成式A(a+b+o+n=5)で表され、a/b>1およびn≧0.7である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108475580KR1020180094020EP3392889US20190023616