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1. (WO2017134991) ORGANIC SEMICONDUCTOR FILM PRODUCTION DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134991 International Application No.: PCT/JP2017/000594
Publication Date: 10.08.2017 International Filing Date: 11.01.2017
IPC:
H01L 21/368 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/786 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/40 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
40
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
国立大学法人東京大学 THE UNIVERSITY OF TOKYO [JP/JP]; 東京都文京区本郷七丁目3番1号 3-1, Hongo 7-chome, Bunkyo-ku, Tokyo 1138654, JP
Inventors:
中村 誠吾 NAKAMURA Seigo; JP
前原 佳紀 MAEHARA Yoshiki; JP
板井 雄一郎 ITAI Yuichiro; JP
宇佐美 由久 USAMI Yoshihisa; JP
竹谷 純一 TAKEYA Junichi; JP
Agent:
渡辺 望稔 WATANABE Mochitoshi; JP
三和 晴子 MIWA Haruko; JP
伊東 秀明 ITOH Hideaki; JP
三橋 史生 MITSUHASHI Fumio; JP
Priority Data:
2016-01910203.02.2016JP
Title (EN) ORGANIC SEMICONDUCTOR FILM PRODUCTION DEVICE
(FR) DISPOSITIF DE PRODUCTION DE FILM SEMI-CONDUCTEUR ORGANIQUE
(JA) 有機半導体膜の製造装置
Abstract:
(EN) An organic semiconductor film production device for producing an organic semiconductor film by using an organic semiconductor solution, the production device having: a coating member that is positioned so as to face the surface of a substrate on which the organic semiconductor film is to be formed at a distance therefrom, and forms a liquid pool of the organic semiconductor solution between the substrate and the coating member itself; a supply unit for supplying the organic semiconductor solution between the substrate and the coating member; and a cover unit for covering at least the crystal growth section of the organic semiconductor solution. The cover unit is equipped with a guide to which a solvent of the vaporized organic semiconductor solution adheres, and which guides the adhered substance formed from the solvent of the vaporized organic semiconductor solution to a region where the organic semiconductor film has not yet been deposited. The production device supplies the organic semiconductor solution between the substrate surface and the coating member by using the supply unit, and while doing so, moves the coating member in a first direction parallel to the substrate surface while the coating member contacts the organic semiconductor solution, and forms the organic semiconductor film with the crystal growth section as the starting point.
(FR) L'invention porte sur un dispositif de production de film semi-conducteur organique servant à produire un film semi-conducteur organique à l'aide d'une solution de semi-conducteur organique, le dispositif de production comprenant : un élément d'application de revêtement qui est positionné de manière à faire face à la surface d'un substrat sur laquelle le film semi-conducteur organique doit être formé, à une certaine distance d'elle, et forme un bassin de liquide de la solution de semi-conducteur organique entre le substrat et l'élément d'application de revêtement lui-même ; une unité d'alimentation pour apporter la solution de semi-conducteur organique entre le substrat et l'élément d'application de revêtement ; et une unité de couvercle pour recouvrir au moins une section de croissance cristalline de la solution de semi-conducteur organique. L'unité de couvercle est équipée d'un guide auquel adhère un solvant de la solution de semi-conducteur organique vaporisée, et qui guide la substance y adhérant, formée à partir du solvant de la solution de semi-conducteur organique vaporisée, vers une région dans laquelle le film semi-conducteur organique n'a pas encore été déposé. Le dispositif de production apporte la solution de semi-conducteur organique entre la surface du substrat et l'élément d'application de revêtement au moyen de l'unité d'alimentation, et tout en faisant cela, déplace l'élément d'application de revêtement dans une première direction parallèle à la surface du substrat pendant que l'élément d'application de revêtement est en contact avec la solution de semi-conducteur organique, et forme le film semi-conducteur organique avec la section de croissance cristalline comme point de départ.
(JA) 有機半導体溶液を用いて有機半導体膜を製造する有機半導体膜の製造装置である。製造装置は、有機半導体膜を形成する基板の表面に対向して離間して配置され、基板との間に有機半導体溶液の液溜りを形成する塗布部材と、基板と塗布部材の間に有機半導体溶液を供給する供給部と、有機半導体溶液の結晶成長部を少なくとも覆うカバー部とを有する。カバー部は蒸発した有機半導体溶液の溶媒が付着し、蒸発した有機半導体溶液の溶媒で形成される付着物を有機半導体膜の未成膜領域に導くガイドを備える。基板の表面との間に供給部で有機半導体溶液を供給しながら、塗布部材を有機半導体溶液に接した状態で、基板の表面と平行な第1の方向に移動させて結晶成長部を起点として有機半導体膜を形成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108496245US20180326447EP3413338