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1. (WO2017134949) DIODE AND SEMICONDUCTOR APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134949 International Application No.: PCT/JP2016/087721
Publication Date: 10.08.2017 International Filing Date: 19.12.2016
IPC:
H01L 29/861 (2006.01) ,H01L 21/8234 (2006.01) ,H01L 27/04 (2006.01) ,H01L 27/06 (2006.01) ,H01L 29/739 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/868 (2006.01) ,H02M 7/48 (2007.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
739
controlled by field effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
トヨタ自動車株式会社 TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 愛知県豊田市トヨタ町1番地 1, Toyota-cho, Toyota-shi Aichi 4718571, JP
Inventors:
柿本 規行 KAKIMOTO Noriyuki; JP
妹尾 賢 SENOO Masaru; JP
Agent:
金 順姫 JIN Shunji; JP
Priority Data:
2016-01925303.02.2016JP
Title (EN) DIODE AND SEMICONDUCTOR APPARATUS
(FR) DIODE ET APPAREIL À SEMI-CONDUCTEUR
(JA) ダイオードおよび半導体装置
Abstract:
(EN) This diode is formed between a drift region (74a) and a second impurity region (77a), and includes a first conduction type barrier region (76a) having a higher impurity concentration than the drift region and a second conduction type electric field extension preventing region (75a) formed between the barrier region and the drift region. Further, the diode includes a trench gate that is formed so as to extend from a second principal surface of a semiconductor substrate to the electric field extension preventing region through the second impurity region and the barrier region and that has a trench electrode to which a gate voltage is applied. As the gate voltage to be applied to the gate electrode, a parasitic gate voltage is applied in which the absolute value of the potential difference from a second electrode is equal to or greater than a threshold voltage of a parasitic transistor formed by the second impurity region, the barrier region, and the electric field extension preventing region.
(FR) L'invention porte sur une diode qui est formée entre une zone de migration (74a) et une seconde zone d'impuretés (77a), et comprend une zone de barrière (76a) d'un premier type de conductivité possédant une concentration en impuretés supérieure à celle de la zone de migration, et une zone de prévention d'extension de champ électrique (75a) d'un second type de conductivité formée entre la zone de barrière et la zone de migration. En outre, la diode comprend une grille en sillon qui est formée de façon à s'étendre d'une seconde surface principale d'un substrat semi-conducteur à la zone de prévention d'extension de champ électrique par l'intermédiaire de la seconde zone d'impuretés et de la zone de barrière, et qui comprend une électrode en sillon à laquelle est appliquée une tension de grille. Comme tension de grille à appliquer à l'électrode de grille, une tension de grille parasite est appliquée dans laquelle la valeur absolue de la différence de potentiel par rapport à une seconde électrode est supérieure ou égale à une tension de seuil d'un transistor parasite formé par la seconde zone d'impuretés, la zone de barrière et la zone de prévention d'extension de champ électrique.
(JA) ダイオードは、ドリフト領域(74a)と第2不純物領域(77a)との間に形成され、ドリフト領域よりも不純物濃度が高くされた第1導電型のバリア領域(76a)と、バリア領域とドリフト領域との間に形成された第2導電型の電界伸展防止領域(75a)と、を有する。また、ダイオードは、半導体基板の第2主面から第2不純物領域およびバリア領域を貫通して電界伸展防止領域に至って形成され、ゲート電圧を印加するためのトレンチ電極を有するトレンチゲートを有する。そして、ゲート電極に、ゲート電圧として、第2電極との電位差の絶対値が、第2不純物領域とバリア領域と電界伸展防止領域とにより形成される寄生トランジスタの閾値電圧以上とされる寄生ゲート電圧が印加される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108604605US20190051648