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1. (WO2017134914) METHOD FOR POLISHING BOTH SURFACES OF WAFER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134914 International Application No.: PCT/JP2016/085701
Publication Date: 10.08.2017 International Filing Date: 01.12.2016
IPC:
B24B 37/08 (2012.01) ,B24B 37/12 (2012.01) ,B24B 37/24 (2012.01) ,H01L 21/304 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
07
characterised by the movement of the work or lapping tool
08
for double side lapping
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
11
Lapping tools
12
Lapping plates for working plane surfaces
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
11
Lapping tools
20
Lapping pads for working plane surfaces
24
characterised by the composition or properties of the pad materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 2-1, Shibaura 1-chome, Minato-ku, Tokyo 1058634, JP
Inventors:
御厨 俊介 MIKURIYA, Shunsuke; JP
三浦 友紀 MIURA, Tomonori; JP
Agent:
須田 正義 SUDA, Masayoshi; JP
Priority Data:
2016-01777102.02.2016JP
Title (EN) METHOD FOR POLISHING BOTH SURFACES OF WAFER
(FR) PROCÉDÉ PERMETTANT DE POLIR LES DEUX SURFACES D'UNE PLAQUETTE
(JA) ウェーハの両面研磨方法
Abstract:
(EN) This method for polishing both surfaces of a wafer includes: clamping a wafer (16) with a donut-shaped upper platen (12) and a lower platen (13) each having a center hole in a central portion thereof and each having a polishing cloth (11) adhered to a polishing surface; and rotating the upper platen and the lower platen while supplying a slurry (17) onto the wafer from a slurry supply hole (18) to polish both surfaces of the wafer, wherein at least one of an outer circumferential-side compression part (11a) and an inner circumferential-side compression part (11b), which are shaped by using a polishing cloth compression jig to compress the outer circumference or the inner circumference of the polishing cloth in the vertical direction, is provided to both polishing cloths adhered respectively to the upper platen and the lower platen, and a compression width A satisfies 0.05 × D ≤ A and a compression width B satisfies 0.30 × D ≤ B, where the width of the outer circumferential side compression part in the horizontal direction is the compression width A, the width of the inner circumferential side compression part in the horizontal direction is the compression width B, and the diameter of the wafer is D.
(FR) La présente invention concerne un procédé permettant d'une polir les deux surfaces d'une plaquette, ledit procédé consistant : à serrer une plaquette (16) avec un plateau supérieur en forme de donut (12) et un plateau inférieur (13) ayant chacun un trou central dans leur partie centrale et ayant chacun un tissu à polir (11) collé à une surface de polissage ; et à faire tourner le plateau supérieur et le plateau inférieur tout en fournissant une pâte (17) sur la plaquette par un trou d'alimentation en pâte (18) afin de polir les deux surfaces de la plaquette, une partie de compression côté circonférence externe (11a) et/ou une partie de compression côté circonférence interne (11b), qui sont formées en utilisant un gabarit de compression de tissu à polir pour comprimer la circonférence externe ou la circonférence interne du tissu à polir dans la direction verticale, étant fournies aux deux tissus à polir adhérant respectivement au plateau supérieur et au plateau inférieur, et une largeur de compression (A) satisfait la relation : 0,05 × D ≤A et une largeur de compression (B) satisfait la relation : 0,30 × D ≤ B, où la largeur de la partie de compression côté circonférence externe dans la direction horizontale est la largeur de compression (A), la largeur de la partie de compression côté circonférence interne dans la direction horizontale est la largeur de compression (B) et le diamètre de la plaquette est D.
(JA) 中央部に中央孔をそれぞれ有し、研磨面に研磨布(11)がそれぞれ貼付されたドーナツ形状の上定盤(12)及び下定盤(13)でウェーハ(16)を狭圧して、スラリー供給孔(18)からウェーハにスラリー(17)を供給しながら、上定盤と下定盤を回転駆動させることにより、ウェーハの両面を研磨する両面研磨方法において、上定盤及び下定盤にそれぞれ貼付された研磨布の双方に、研磨布の外周又は内周を研磨布圧縮治具を用いて鉛直方向に圧縮して成型した外周側圧縮部(11a)又は内周側圧縮部(11b)のいずれか一方或いは双方が設けられ、外周側圧縮部の水平方向における幅を圧縮幅A、内周側圧縮部の水平方向における幅を圧縮幅B、ウェーハの直径をDとするとき、圧縮幅Aが0.05×D≦Aを満たし、圧縮幅Bが0.30×D≧Bを満たす。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)