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1. (WO2017134896) METHOD FOR MANUFACTURING X-RAY IMAGE ACQUISITION DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134896 International Application No.: PCT/JP2016/083950
Publication Date: 10.08.2017 International Filing Date: 16.11.2016
IPC:
A61B 6/00 (2006.01) ,G01T 1/20 (2006.01) ,H01L 27/144 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/10 (2006.01)
A HUMAN NECESSITIES
61
MEDICAL OR VETERINARY SCIENCE; HYGIENE
B
DIAGNOSIS; SURGERY; IDENTIFICATION
6
Apparatus for radiation diagnosis, e.g. combined with radiation therapy equipment
G PHYSICS
01
MEASURING; TESTING
T
MEASUREMENT OF NUCLEAR OR X-RADIATION
1
Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16
Measuring radiation intensity
20
with scintillation detectors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
株式会社ブイ・テクノロジー V TECHNOLOGY CO., LTD. [JP/JP]; 神奈川県横浜市保土ヶ谷区神戸町134番地 134, Godo-cho, Hodogaya-ku, Yokohama-shi, Kanagawa 2400005, JP
Inventors:
水村 通伸 MIZUMURA, Michinobu; JP
田坂 知樹 TASAKA, Tomoki; JP
藤森 裕也 FUJIMORI, Yuya; JP
Agent:
白坂 一 SHIRASAKA, Hajime; JP
高梨 玲子 TAKANASHI, Reiko; JP
播磨 里江子 HARIMA, Rieko; JP
Priority Data:
2016-01979904.02.2016JP
Title (EN) METHOD FOR MANUFACTURING X-RAY IMAGE ACQUISITION DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF D’ACQUISITION D’IMAGE RADIOGRAPHIQUE
(JA) X線撮像素子の製造方法
Abstract:
(EN) Provided is a method for manufacturing an X-ray image acquisition device with which it is possible, by subjecting a photoelectric conversion film to annealing in accordance with light emission characteristics of a fluorescent material, to suppress a deviation between the light emission wavelength of a scintillator and the detection wavelength of a photodiode, thus allowing diagnosis of a patient with a low radiation dose. Included are: a TFT-circuit-layer forming step for forming a FT circuit layer on a top layer of a support substrate; a photoelectric-conversion-film forming step for forming, on a top layer of the TFT circuit, a photoelectric conversion film that converts visible light to electrical signals and that is formed of a photodiode; an annealing step for subjecting the photoelectric conversion film to annealing in accordance with light emission characteristics of a fluorescent material; and a fluorescer-layer forming step for forming, on a top layer of the photoelectric conversion film, a fluorescer layer that converts X-rays to visible light and that is formed of the fluorescent material.
(FR) La présente invention concerne un procédé de fabrication d’un dispositif d’acquisition d’image radiographique avec lequel il est possible, en soumettant un film de conversion photoélectrique à un recuit en fonction de caractéristiques d’émission de lumière d’un matériau fluorescent, pour supprimer un écart entre la longueur d’onde d’émission de lumière d’un scintillateur et la longueur d’onde de détection d’une photodiode, de manière à permettre le diagnostic d’un patient avec une dose de rayonnement faible. L’invention comprend : une étape de formation de couche de circuit de transistor à couche mince (TFT) pour former une couche de circuit TFT sur une couche supérieure d’un substrat de support ; une étape de formation de film de conversion photoélectrique pour former, sur une couche supérieure du circuit TFT, un film de conversion photoélectrique qui convertit une lumière visible en signaux électriques et qui est formé d’une photodiode ; une étape de recuit pour soumettre le film de conversion photoélectrique à un recuit en fonction des caractéristiques d’émission de lumière d’un matériau fluorescent ; et une étape de formation de couche d’agent fluorescent pour former, sur une couche supérieure du film de conversion photoélectrique, une couche d’agent fluorescent qui convertit les rayons X en lumière visible et qui est formée du matériau fluorescent.
(JA) 光電変換膜に蛍光材料の発光特性に応じたアニール処理を施すことにより、シンチレータの発光波長とフォトダイオードの検出波長とのずれを抑制することができ、よって少ない放射線被曝線量で患者を診断することができるX線撮像素子の製造方法を提供する。支持基板の上層にTFT回路層を形成するTFT回路層形成ステップと、TFT回路の上層に可視光を電気信号に変換するフォトダイオードからなる光電変換膜を形成する光電変換膜形成ステップと、光電変換膜に蛍光材料の発光特性に応じたアニール処理を施すアニール処理ステップと、光電変換膜の上層にX線を可視光に変換する蛍光材料からなる蛍光体層を形成する蛍光体層形成ステップと、を含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)