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1. (WO2017134804) SENSOR ELEMENT AND SENSOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134804 International Application No.: PCT/JP2016/053435
Publication Date: 10.08.2017 International Filing Date: 05.02.2016
IPC:
G01N 27/414 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27
Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26
by investigating electrochemical variables; by using electrolysis or electrophoresis
403
Cells and electrode assemblies
414
Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
Applicants:
株式会社日立製作所 HITACHI, LTD. [JP/JP]; 東京都千代田区丸の内一丁目6番6号 6-6, Marunouchi 1-chome, Chiyoda-ku, Tokyo 1008280, JP
Inventors:
田井 光春 TAI Mitsuharu; JP
黒土 健三 KUROTSUCHI Kenzo; JP
永田 真斗 NAGATA Sanato; JP
鈴木 聖一 SUZUKI Seiichi; JP
高橋 宏昌 TAKAHASHI Hiromasa; JP
亀代 典史 KAMESHIRO Norifumi; JP
安藤 正彦 ANDO Masahiko; JP
何 希倫 HO Shirun; JP
諏訪 雄二 SUWA Yuji; JP
Agent:
戸田 裕二 TODA Yuji; JP
Priority Data:
Title (EN) SENSOR ELEMENT AND SENSOR DEVICE
(FR) ÉLÉMENT CAPTEUR ET DISPOSITIF CAPTEUR
(JA) センサ素子およびセンサデバイス
Abstract:
(EN) Provided are a micro-sized, highly sensitive, highly reliable sensor element and a sensor device having long service life in which the sensor element is applied. A sensor element provided with a field-effect transistor (FET) formed on an insulated substrate, wherein the sensor element is provided with a first chamber formed above a channel included in the FET, and a second chamber formed above the first chamber, the first chamber and the second chamber are filled with an electrolytic solution, and a lipid bilayer membrane is formed at the boundary between the first chamber and the second chamber.
(FR) La présente invention concerne un élément capteur hautement fiable, hautement sensible, micro-dimensionné, et un dispositif capteur ayant une longue durée de vie en service dans lequel l'élément capteur est appliqué. Un élément capteur comprenant un transistor à effet de champ (FET) est formé sur un substrat isolé, l'élément capteur comprenant une première chambre formée au-dessus d'un canal compris dans le FET, et une seconde chambre formée au-dessus de la première chambre, la première chambre et la seconde chambre étant remplies d'une solution électrolytique, et une membrane bicouche lipidique étant formée à la frontière entre la première chambre et la seconde chambre.
(JA) 微小サイズの、高感度かつ高信頼のセンサ素子、およびそのセンサ素子を適用した長寿命のセンサデバイスを提供する。 絶縁基板上に形成された電界効果トランジスタ(FET)を備えるセンサ素子において、前記FETに含まれるチャネルの上方に形成される第1のチャンバと、前記第1のチャンバの上方に形成される第2のチャンバとを備え、前記第1のチャンバと前記第2のチャンバは電解質溶液で満たされており、前記第1のチャンバと前記第2のチャンバの境界に脂質二重膜が形成される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)