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1. (WO2017134713) ULTRAVIOLET LIGHT-EMITTING ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/134713 International Application No.: PCT/JP2016/004924
Publication Date: 10.08.2017 International Filing Date: 18.11.2016
IPC:
H01L 33/06 (2010.01) ,H01L 33/32 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP
Inventors:
美濃 卓哉 MINO, Takuya; --
高野 隆好 TAKANO, Takayoshi; --
野口 憲路 NOGUCHI, Norimichi; --
阪井 淳 SAKAI, Jun; --
後藤 浩嗣 GOTO, Koji; --
平山 秀樹 HIRAYAMA, Hideki; JP
Agent:
西川 惠清 NISHIKAWA, Yoshikiyo; JP
坂口 武 SAKAGUCHI, Takeshi; JP
北出 英敏 KITADE, Hidetoshi; JP
仲石 晴樹 NAKAISHI, Haruki; JP
Priority Data:
2016-01698601.02.2016JP
Title (EN) ULTRAVIOLET LIGHT-EMITTING ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT ULTRAVIOLET
(JA) 紫外線発光素子
Abstract:
(EN) The present invention addresses the problem of providing an ultraviolet light-emitting element capable of achieving high light output. The ultraviolet light-emitting element (10) is provided with: a laminate (20) in which an n-type AlGaN layer (3), a light-emitting layer (4), and a p-type AlGaN layer (6) are arranged in this order; a negative electrode (8); and a positive electrode (9). The p-type AlGaN layer (6) has a laminated structure in which a plurality of first p-type AlGaN layers (61) and a plurality of second p-type AlGaN layers (62) are alternately arranged. Each of the plurality of first p-type AlGaN layers (61) has an Al composition ratio greater than the first AlGaN layer forming a well layer (41) of the light-emitting layer (4), and contains Mg. Each of the plurality of second p-type AlGaN layers (62) has an Al composition ratio greater than the first AlGaN layer, and contains Mg the concentration of which is greater than that of each of the plurality of first p-type AlGaN layers (61).
(FR) La présente invention aborde le problème de produire un élément électroluminescent ultraviolet pouvant obtenir une sortie de lumière élevée. L'élément électroluminescent ultraviolet (10) est pourvu : d'un stratifié (20) dans laquelle une couche d'AlGaN de type n (3), une couche électroluminescente (4) et une couche d'AlGaN de type p (6) sont agencées dans cet ordre ; d'une électrode négative (8) ; et d'une électrode positive (9). La couche d'AlGaN de type p (6) présente une structure stratifiée dans laquelle une pluralité de premières couches d'AlGaN de type p (61) et une pluralité de secondes couches d'AlGaN de type p (62) sont disposées en alternance. Chaque couche de la pluralité de premières couches d'AlGaN de type p (61) a un rapport de composition en Al supérieur à celui de la première couche d'AlGaN formant une couche de puits (41) de la couche électroluminescente (4), et contient du Mg. Chaque couche de la pluralité de secondes couches d'AlGaN de type p (62) a un rapport de composition en Al supérieur à celui de la première couche d'AlGaN, et contient du Mg dont la concentration est supérieure à celle de chaque couche de la pluralité de premières couches d'AlGaN de type p (61).
(JA) 本発明の課題は、光出力の高出力化を図ることが可能な紫外線発光素子を提供することである。紫外線発光素子(10)は、n型AlGaN層(3)、発光層(4)及びp型AlGaN層(6)がこの順に並んでいる積層体(20)と、負電極(8)と、正電極(9)と、を備える。p型AlGaN層(6)は、複数の第1のp型AlGaN層(61)と複数の第2のp型AlGaN層(62)とが交互に並んでいる積層構造を有する。複数の第1のp型AlGaN層(61)の各々は、発光層(4)の井戸層(41)を構成する第1のAlGaN層よりもAlの組成比が大きく、かつMgを含有している。複数の第2のp型AlGaN層(62)の各々は、第1のAlGaN層よりもAlの組成比が大きく、かつ複数の第1のp型AlGaN層(61)の各々よりも高い濃度でMgを含有している。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)