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1. WO2017134708 - EPITAXIAL SUBSTRATE

Publication Number WO/2017/134708
Publication Date 10.08.2017
International Application No. PCT/JP2016/004777
International Filing Date 01.11.2016
IPC
C30B 29/38 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C23C 16/34 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C30B 25/18 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
18characterised by the substrate
H01L 21/20 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 33/22 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
22Roughened surfaces, e.g. at the interface between epitaxial layers
CPC
B32B 3/30
BPERFORMING OPERATIONS; TRANSPORTING
32LAYERED PRODUCTS
BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
3Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form
26characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids
30characterised by a layer formed with recesses or projections, e.g. ; hollows, grooves, protuberances, ribs
C23C 16/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
34Nitrides
C30B 25/18
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
18characterised by the substrate
C30B 29/38
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 29/68
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60characterised by shape
68Crystals with laminate structure, e.g. "superlattices"
Applicants
  • パナソニック株式会社 PANASONIC CORPORATION [JP]/[JP]
  • 国立研究開発法人理化学研究所 RIKEN [JP]/[JP]
Inventors
  • 野口 憲路 NOGUCHI, Norimichi
  • 美濃 卓哉 MINO, Takuya
  • 高野 隆好 TAKANO, Takayoshi
  • 阪井 淳 SAKAI, Jun
  • 高野 仁路 TAKANO, Hitomichi
  • 椿 健治 TSUBAKI, Kenji
  • 平山 秀樹 HIRAYAMA, Hideki
Agents
  • 西川 惠清 NISHIKAWA, Yoshikiyo
  • 坂口 武 SAKAGUCHI, Takeshi
  • 北出 英敏 KITADE, Hidetoshi
  • 仲石 晴樹 NAKAISHI, Haruki
Priority Data
2016-01698501.02.2016JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) EPITAXIAL SUBSTRATE
(FR) SUBSTRAT ÉPITAXIAL
(JA) エピタキシャル基板
Abstract
(EN) The purpose of the present invention is to provide an epitaxial substrate capable of further increasing crystalline properties. This epitaxial substrate (1) comprises a monocrystal substrate (2) in which multiple protrusions (22) are arranged arrayed in a plane (21), and an AlN layer (2). Each of the multiple protrusions (22) has a conical shape tapered in the direction normal to the plane (21). The AlN layer (3) includes a first AlN crystal (31) which covers the plane (21) and the multiple protrusions (22) such that the tips of the multiple protrusions (22) are exposed, multiple columnar second AlN crystals (32) which project from the tips of the multiple protrusions (22) along the direction normal to the plane (21) and increase in cross-sectional area the greater the distance from the tips of the corresponding protrusions (22), and a laminate third AlN crystal (33) which links the ends (322) of the multiple second AlN crystals (32) opposite of the monocrystal substrate (2).
(FR) L’invention a pour objet de fournir un substrat épitaxial permettant d’améliorer davantage les propriétés cristallines. Ce substrat épitaxial (1) est équipé d’un substrat monocristallin (2) sur une face plane (21) duquel une pluralité de saillies (22) est arrangée en réseau, et d’une couche AlN (3). Chacune de ces saillies (22) prend une forme de cône effilée dans la direction normale de la face plane (21). La couche AlN (3) contient : des premiers cristaux AlN (31) recouvrant la face plane (21) ainsi que la pluralité de saillies (22) de manière à exposer une extrémité avant de la pluralité de saillies (22) ; une pluralité de seconds cristaux AlN (32) sous forme de colonne en saillie par rapport à l’extrémité avant de la pluralité de saillies (22) dans la direction normale de la face plane (21), et dont la surface transversale augmente au fur et à mesure que leur distance par rapport à l’extrémité avant de saillie (22) correspondante augmente ; et des troisièmes cristaux AlN (33) sous forme de couche raccordant des parties extrémités (322) de la pluralité de seconds cristaux AlN (32) côté opposé au substrat monocristallin (2).
(JA) 本発明の課題は、結晶性の更なる向上を図ることが可能なエピタキシャル基板を提供することである。エピタキシャル基板(1)は、一平面(21)に、複数の突起(22)がアレイ状に並んでいる単結晶基板(2)と、AlN層(3)と、を備える。複数の突起(22)の各々は、一平面(21)の法線方向に先細りとなる錐状である。AlN層(3)は、複数の突起(22)の先端が露出するように一平面(21)及び複数の突起(22)を覆う第1AlN結晶(31)と、複数の突起(22)の先端から一平面(21)の法線方向に沿って突出し、対応する突起(22)の先端からの距離が長くなるにつれて断面積が大きくなる柱状の複数の第2AlN結晶(32)と、複数の第2AlN結晶(32)における単結晶基板(2)とは反対側の端部(322)を連結している層状の第3AlN結晶(33)と、を含む。
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