Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017133930) METHOD FOR DETERMINING AND REGULATING A DIAMETER OF A SINGLE CRYSTAL DURING PULLING OF THE SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/133930 International Application No.: PCT/EP2017/051446
Publication Date: 10.08.2017 International Filing Date: 24.01.2017
IPC:
C30B 15/20 (2006.01) ,C30B 15/30 (2006.01) ,C30B 29/06 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
30
Mechanisms for rotating or moving either the melt or the crystal
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
SILTRONIC AG [DE/DE]; Hanns-Seidel-Platz 4 81737 München, DE
Inventors:
SCHRÖCK, Thomas; DE
AUBRUNNER, Thomas; DE
Agent:
STAUDACHER, Wolfgang; DE
KILLINGER, Andreas; DE
Priority Data:
10 2016 201 778.005.02.2016DE
Title (DE) VERFAHREN ZUM ERMITTELN UND REGELN EINES DURCHMESSERS EINES EINKRISTALLS BEIM ZIEHEN DES EINKRISTALLS
(EN) METHOD FOR DETERMINING AND REGULATING A DIAMETER OF A SINGLE CRYSTAL DURING PULLING OF THE SINGLE CRYSTAL
(FR) PROCÉDÉS DE DÉTERMINATION ET DE RÉGULATION D’UN DIAMÈTRE D’UN MONOCRISTAL LORS DU TIRAGE DU MONOCRISTAL
Abstract:
(DE) Die Erfindung betrifft Verfahren zum Ermitteln eines Durchmessers (dk) eines Einkristalls (200) beim Ziehen des Einkristalls (200), insbesondere eines Endkonus (210) des Einkristalls (200), aus einer Schmelze (230) in einem Tiegel (130) einer Vorrichtung (100) zum Ziehen des Einkristalls (200), wobei unter Berücksichtigung einer ersten Absinkgeschwindigkeit (vs) einer Oberfläche (235) der Schmelze (230) relativ zu dem Tiegel (130), einer ersten Hubgeschwindigkeit (vk), mit welcher der Einkristall (200) relativ zu dem Tiegel (130) angehoben wird, und einer Massenerhaltung der Durchmesser (dk) des Einkristalls (200) an einer Grenzfläche zur Schmelze (230) ermittelt wird.
(EN) The invention relates to a method for determining a diameter (dk) of a single crystal (200) during the pulling of the single crystal (200), in particular an end-cone (210) of the single crystal (200), from a melt (230) in a crucible (130) of a device (100) for pulling the single crystal (200), wherein the diameter (dk) of the single crystal (200) is determined at a boundary surface to the melt (230), taking into account a first lowering speed (vs) of a surface (235) of the melt (230) relative to the crucible (130), a first lifting speed (vk) with which the single crystal (200) is raised relative to the crucible (130), and a conservation of mass.
(FR) L’invention concerne des procédés de détermination d’un diamètre (dk) d’un monocristal (200) lors du tirage du monocristal (200), notamment d’un cône terminal (210) du monocristal (200) à partir d’une matière fondue (230) dans un creuset (130) d’un dispositif (100) pour le tirage du monocristal (200). Le diamètre (dk) du monocristal (200) est déterminé au niveau d’une interface avec la matière fondue (230) avec prise en compte d’une première vitesse d’abaissement (vs) d’une surface (235) de la matière fondue (230) par rapport au creuset (130), d’une première vitesse de levée (vk) avec laquelle le monocristal (200) est levé par rapport au creuset (130) et d’une conservation de masse.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)
Also published as:
SG11201805551RKR1020180099853CN108699723EP3411515US20180363163