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1. (WO2017133622) HIGH-CONDUCTIVITY AND HIGH-VOLTAGE SOLAR PHOTOVOLTAIC GLASS PANEL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/133622 International Application No.: PCT/CN2017/072632
Publication Date: 10.08.2017 International Filing Date: 25.01.2017
IPC:
H01L 31/048 (2014.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
048
encapsulated or with housing
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
武汉华尚绿能科技股份有限公司 WUHAN HUASHANG GREEN TECHNOLOGY CO.,LTD [CN/CN]; 中国湖北省武汉市 江汉区新华路取水楼民生银行大厦4901 4901 Minsheng Bank Building,Xinhua Road water tower,Jianghan District Wuhan, Hubei 430000, CN
Inventors:
刘联家 LIU, Lianjia; CN
盖庆亮 GAI, Qingliang; CN
尤晓江 YOU, Xiaojiang; CN
Agent:
武汉华旭知识产权事务所 WUHAN HUAXU INTELLECTUAL PROPERTY FIRM; 中国湖北省武汉市 洪山区雄楚大街209号御景名门2栋10-A 2-10-A Yujingmingmen Building,No.209,Xiongchu Street,Hongshan District Wuhan, Hubei 430070, CN
Priority Data:
201610076702.703.02.2016CN
Title (EN) HIGH-CONDUCTIVITY AND HIGH-VOLTAGE SOLAR PHOTOVOLTAIC GLASS PANEL
(FR) PANNEAU DE VERRE PHOTOVOLTAÏQUE SOLAIRE À HAUTE CONDUCTIVITÉ ET À HAUTE TENSION
(ZH) 高导通高电压太阳能光电玻璃板
Abstract:
(EN) Disclosed is a high-conductivity and high-voltage solar photovoltaic glass panel. The glass panel comprises two glass substrates (1). The surface of the glass substrates is provided with electrically conductive traces (2) formed from an electrically conductive paste printed on the air sides of the glass substrates by baking, heating and cooling and then fusing with the surfaces of the glass substrates. A solar wafer (7) having electrodes at two sides thereof is disposed between the two glass substrates, and the two electrodes of the solar wafer are connected to bonding pads (3) of the conductive traces of the two glass substrates via tin layers (4), respectively. Edges of the two glass substrates are provided with sealant (8), and the glass substrates are tempered glass substrates. A portion of the surfaces of the conductive traces, excluding the bonding pads welded to the solar wafer, is covered with a PCB organic solder mask. The high-conductivity and high-voltage solar photovoltaic glass panel of the present invention has high conductivity, high light transmittance, good heat conduction for high power applications, and can be applied to scenarios requiring large-area light transmission such as roofs of large greenhouses.
(FR) L'invention concerne un panneau de verre photovoltaïque solaire à haute conductivité et à haute tension. Le panneau de verre comprend deux substrats de verre (1). La surface des substrats de verre est pourvue de traces électroconductrices (2) constituées d'une pâte électroconductrice imprimée sur les côtés d'air des substrats de verre par cuisson, chauffage et refroidissement puis fusion avec les surfaces des substrats de verre. Une tranche solaire (7) ayant des électrodes des deux côtés est disposée entre les deux substrats de verre, et les deux électrodes de la tranche solaire sont connectées à des plots de connexion (3) des traces conductrices des deux substrats de verre par l'intermédiaire de couches d'étain (4), respectivement. Les bords des deux substrats de verre sont pourvus d'un matériau d'étanchéité (8), et les substrats de verre sont des substrats de verre trempé. Une partie des surfaces des tracés conductrices, à l'exception des plots de connexion soudés à la tranche solaire, est recouverte d'un masque de soudure organique de PCB. Le panneau de verre photovoltaïque solaire à haute conductivité et à haute tension de la présente invention a une conductivité élevée, une transmittance de lumière élevée, une bonne conduction thermique pour des applications à puissance élevée, et peut être appliqué à des scénarios nécessitant une transmission de lumière de grande surface tels que les toits de grandes serres.
(ZH) 一种高导通高电压太阳能光电玻璃板,包括玻璃基板(1),玻璃基板有两块,玻璃基板的表面设有由印刷于玻璃基板空气面的导电浆料在烘烤、加热和冷却后与玻璃基板表面熔融的导电线路(2),两块玻璃基板之间夹有电极位于两面的太阳能晶片(7),太阳能晶片的两个电极分别通过锡层(4)与两块玻璃基板的导电线路的焊盘(3)连接,两块玻璃基板的边缘设置有密封胶(8);玻璃基板为钢化玻璃基板;导电线路表面除去焊接太阳能晶片的焊盘以外的部分覆盖有PCB有机阻焊漆。高导通高电压太阳能光电玻璃板具有高导通率、高透光率的特点,大功率应用时具有良好的导热能力,能够应用于农业大棚顶棚等需要大面积透光的场景使用。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
EP3413357US20190035961