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1. (WO2017133145) METAL-OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURE THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/133145 International Application No.: PCT/CN2016/083536
Publication Date: 10.08.2017 International Filing Date: 26.05.2016
IPC:
H01L 29/786 (2006.01) ,H01L 29/51 (2006.01) ,H01L 21/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
Applicants:
深圳市华星光电技术有限公司 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN/CN]; 中国广东省深圳市 光明新区塘明大道9-2号 No.9-2, Tangming Road, Guangming Shenzhen, Guangdong 518132, CN
Inventors:
王质武 WANG, Zhiwu; CN
Agent:
深圳市铭粤知识产权代理有限公司 MING & YUE INTELLECTUAL PROPERTY LAW FIRM; 中国广东省深圳市南山区南山街道前海路泛海城市广场2栋604室 Room 604 Building 2, Oceanwide City Square, Qianhai Road, Nanshan Street, Nanshan District Shenzhen, Guangdong 518066, CN
Priority Data:
201610081471.905.02.2016CN
Title (EN) METAL-OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURE THEREOF
(FR) TRANSISTOR EN COUCHES MINCES À BASE D’OXYDES MÉTALLIQUES ET SON PROCÉDÉ DE FABRICATION
(ZH) 金属氧化物薄膜晶体管及其制造方法
Abstract:
(EN) Provided are a metal-oxide thin film transistor and a method for manufacturing same; said thin film transistor comprises a substrate (1), a buffer layer (2) formed on the substrate, and an active layer (3) formed on the buffer layer; it also comprises a source electrode (61) and a drain electrode (62) formed on the two sides of the active layer, respectively, a gate insulating layer (4) formed on the active layer, a gate (5) formed on the gate insulating layer, and a dielectric layer (7) formed on the gate, the material of said dielectric layer being SiOx. SiOx material is used in the dielectric layer, and the hydrogen ion content of said material is far lower than that of SiNx; therefore the problem of significant active-layer leakage due to hydrogen ions dispersing in the active layer is effectively reduced, thus improving the electrical properties of the metal-oxide thin film transistor.
(FR) La présente invention concerne un transistor en couches minces à base d’oxydes métalliques et un procédé de fabrication dudit transistor. Ce transistor comprend un substrat (1), une couche tampon (2) formée sur le substrat, et une couche active (3) formée sur la couche tampon. Il comprend également une électrode source (61) et une électrode drain (62) formées respectivement sur les deux faces de la couche active, une couche d’isolation de porte (4) formée sur la couche active, une porte (5) formée sur la couche d’isolation de porte, et une couche diélectrique (7) formée sur la porte, le matériau de ladite couche diélectrique étant du SiOx. Le SiOx est utilisé dans la couche diélectrique, et la teneur en ions hydrogène dudit matériau est bien plus basse que celle du SiNx. Par conséquent, le problème dû à des fuites importantes dans la couche active en raison de la dispersion d’ions hydrogène dans ladite couche active est effectivement réduit, ce qui améliore les propriétés électriques dudit transistor en couches minces à base d’oxydes métalliques.
(ZH) 一种金属氧化物薄膜晶体管及其制造方法,该薄膜晶体管包括基板(1)、形成于基板上的缓冲层(2)以及形成于缓冲层上的有源层(3),还包括分别形成于有源层两侧的源极(61)和漏极(62)、形成于有源层上的栅极绝缘层(4)、形成于栅极绝缘层上的栅极(5)以及形成于栅极上的介电层(7),且介电层的材料为SiOx。由于介电层中采用SiOx材料,此材料中的氢离子含量远低于SiNx,因此可以有效地降低因氢离子扩散在有源层中导致有源层漏电较多的问题,由此来改善金属氧化物薄膜晶体管的电学性能。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
US20170373181