Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017133114) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/133114 International Application No.: PCT/CN2016/081696
Publication Date: 10.08.2017 International Filing Date: 11.05.2016
IPC:
H01L 21/336 (2006.01) ,H01L 29/786 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; 中国北京市 朝阳区酒仙桥路10号 No.10 Jiuxianqiao Rd. Chaoyang District Beijing 100015, CN
华南理工大学 SOUTH CHINA UNIVERSITY OF TECHNOLOGY [CN/CN]; 中国广东省广州市 天河区五山路381号 No.381 Wushan Rd. Tianhe District Guangzhou, Guangdong 510640, CN
Inventors:
闫梁臣 YAN, Liangchen; CN
袁广才 YUAN, Guangcai; CN
徐晓光 XU, Xiaoguang; CN
王磊 WANG, Lei; CN
彭俊彪 PENG, Junbiao; CN
兰林锋 LAN, Linfeng; CN
Agent:
北京市柳沈律师事务所 LIU, SHEN & ASSOCIATES; 中国北京市 海淀区彩和坊路10号1号楼10层 10th Floor, Building 1, 10 Caihefang Road Haidian District Beijing 100080, CN
Priority Data:
201610076318.703.02.2016CN
Title (EN) THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR
(FR) TRANSISTOR EN COUCHES MINCES ET SON PROCÉDÉ DE FABRICATION
(ZH) 薄膜晶体管及其制造方法
Abstract:
(EN) Provided are a thin film transistor and a manufacturing method therefor. The manufacturing method for the thin film transistor comprises: a step of depositing a metal thin film layer (20,30) on a substrate (10) by using a direct current sputtering method; and a step of completely oxidizing or partially oxidizing the metal in the metal thin film layer (20,30) so as to form a metal oxide thin film layer (23,32). The thin film transistor has a firmly combined grid layer (22) and grid insulating layer (23).
(FR) L’invention concerne un transistor en couches minces et son procédé de fabrication. Le procédé de fabrication pour le transistor en couches minces comprend : une étape consistant à déposer une couche de film mince métallique (20, 30) sur un substrat (10) par utilisation d’un procédé de pulvérisation cathodique à courant continu ; et une étape consistant à oxyder complètement ou à oxyder partiellement le métal dans la couche de film mince métallique (20, 30) de façon à former une couche de film mince à base d’oxyde métallique (23, 32). Le transistor en couches minces a une couche de grille (22) et une couche d’isolation de grille (23) associées solidement.
(ZH) 一种薄膜晶体管及其制造方法,薄膜晶体管制造方法包括:采用直流溅射法在基板(10)上沉积金属薄膜层(20,30)的步骤;将所述金属薄膜层(20,30)中的金属完全氧化或者部分氧化形成金属氧化物薄膜层(23,32)的步骤。薄膜晶体管具有紧密结合的栅极层(22)和栅极绝缘层(23)。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)
Also published as:
US20180090601EP3413335