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1. (WO2017133106) FLEXIBLE SUBSTRATE STRUCTURE AND METHOD OF FORMING SAME, AND FLEXIBLE ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/133106 International Application No.: PCT/CN2016/081233
Publication Date: 10.08.2017 International Filing Date: 06.05.2016
IPC:
H01L 23/14 (2006.01) ,H01L 21/48 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
14
characterised by the material or its electrical properties
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
48
Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/06-H01L21/326201
Applicants:
合肥威迪变色玻璃有限公司 HEFEI VDI CORPORATION [CN/CN]; 中国安徽省合肥市合肥新站区武里山路安徽鑫昊等离子显示器件有限公司103号厂房 Building 103, Anhui Xinhao Plasma Display Device Ltd. Wulishan Road, Hefeixinzhan District, Hefei, Anhui 230012, CN
Inventors:
刘钧 LIU, Jun; US
裴世铀 PEI, Shiyou; CN
Agent:
北京集佳知识产权代理有限公司 UNITALEN ATTORNEYS AT LAW; 中国北京市 朝阳区建国门外大街22号赛特广场7层 7th Floor, Scitech Place No.22, Jian Guo Men Wai Ave. Chao Yang District Beijing 100004, CN
Priority Data:
201610084031.906.02.2016CN
201620118799.906.02.2016CN
Title (EN) FLEXIBLE SUBSTRATE STRUCTURE AND METHOD OF FORMING SAME, AND FLEXIBLE ELECTRONIC DEVICE
(FR) STRUCTURE DE SUBSTRAT SOUPLE ET SON PROCÉDÉ DE FORMATION, ET DISPOSITIF ÉLECTRONIQUE SOUPLE
(ZH) 柔性基板结构及其形成方法,柔性电子器件
Abstract:
(EN) Disclosed are a flexible substrate structure and a method of forming the same, and a flexible electronic device. The flexible substrate structure comprises a flexible underlayer (100); a planarization layer (110) located on the flexible underlayer (100), a surface thereof located away from one side of the flexible underlayer (100) being flat; and a barrier layer (120) located on the planarization layer (110), the barrier layer (120) being used to block the permeation of oxygen and water vapor. The flexible substrate structure can effectively block the permeation of oxygen and water vapor, thereby improving the reliability and service life of an electronic device formed thereon.
(FR) L'invention concerne une structure de substrat souple et son procédé de formation, et un dispositif électronique souple. La structure de substrat souple comprend une sous-couche souple (100) ; une couche de planarisation (110) située sur la sous-couche souple (100), et dont la surface située à l'opposé du côté sous-couche souple (100) est plate ; et une couche barrière (120) située sur la couche de planarisation (110), la couche barrière (120) étant utilisée pour bloquer la perméation d'oxygène et de vapeur d'eau. La structure de substrat souple peut efficacement bloquer la perméation d'oxygène et de vapeur d'eau, ce qui permet d'améliorer la fiabilité et la durée de vie d'un dispositif électronique formé sur sur elle.
(ZH) 一种柔性基板结构及其形成方法,和一种柔性电子器件,其中,所述柔性基板结构包括:柔性衬底(100);位于所述柔性衬底(100)上的平坦化层(110),所述平坦化层(110)远离所述柔性衬底(100)一侧的表面平坦;位于所述平坦化层(110)上的阻挡层(120),所述阻挡层(120)用于阻挡氧气和水气的渗透。该柔性基板结构可以有效阻挡氧气和水气的渗透,提高形成于其上的电子器件的可靠性和寿命。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)