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1. WO2017132616 - MATRIX TYPE INTEGRATED CIRCUIT WITH FAULT ISOLATION CAPABILITY

Publication Number WO/2017/132616
Publication Date 03.08.2017
International Application No. PCT/US2017/015502
International Filing Date 27.01.2017
IPC
H04N 5/376 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
376Addressing circuits
H04N 5/367 2011.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
357Noise processing, e.g. detecting, correcting, reducing or removing noise
365applied to fixed-pattern noise, e.g. non-uniformity of response
367applied to defects, e.g. non-responsive pixels
H04N 5/32 2006.01
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
32Transforming X-rays
CPC
G01R 31/2601
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
31Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
26Testing of individual semiconductor devices
2601Apparatus or methods therefor
H01L 27/14625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
H01L 27/14634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14634Assemblies, i.e. Hybrid structures
H01L 27/14636
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14636Interconnect structures
H01L 27/14658
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14658X-ray, gamma-ray or corpuscular radiation imagers
H04N 5/32
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
32Transforming X-rays
Applicants
  • VAREX IMAGING CORPORATION [US]/[US]
Inventors
  • ROOS, Pieter
Agents
  • DAVID, Wilding
Priority Data
15/007,31227.01.2016US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MATRIX TYPE INTEGRATED CIRCUIT WITH FAULT ISOLATION CAPABILITY
(FR) CIRCUIT INTÉGRÉ DE TYPE MATRICE AVEC CAPACITÉ D'ISOLATION DE DÉFAUT
Abstract
(EN)
Technology is described for selectively disconnecting a communal module (e.g., horizontal power and signal distribution network) from conductive traces (e.g., vertical columns) that are coupled to cell elements. In one example, a matrix type integrated circuit includes a two dimensional (2D) array of cell elements, a plurality of conductive traces, a communal module, and a plurality of switches. Each cell element in the 2D array provides a similar function. The plurality of conductive traces is substantially parallel to a first axis of the 2D array. Each conductive trace is coupled to a conductive interconnect of cell elements adjacent to the conductive trace. The communal module is configured to provide distribution of at least one electrical signal to the cell elements in the 2D array via at least two conductive traces that are substantially parallel to the first axis.
(FR)
L'invention concerne une technologie permettant de déconnecter sélectivement un module commun (par exemple, un réseau horizontal de distribution d'énergie et de signal) de traces conductrices (par exemple, des colonnes verticales) couplées à des éléments de cellule. Dans un exemple, un circuit intégré de type matrice comprend un réseau bidimensionnel (2D) de cellules élémentaires, une pluralité de traces conductrices, un module commun, et une pluralité de commutateurs. Chaque cellule élémentaire du réseau 2D remplit une fonction similaire. La pluralité de traces conductrices est sensiblement parallèle à un premier axe du réseau 2D. Chaque trace conductrice est couplée à une interconnexion conductrice de cellules élémentaires adjacentes à la piste conductrice. Le module commun est configuré pour assurer la distribution d'au moins un signal électrique aux cellules élémentaires du réseau 2D par l'intermédiaire d'au moins deux traces conductrices qui sont sensiblement parallèles au premier axe.
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