Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017131897) VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING AN INTERFACIAL OXYGEN SOURCE LAYER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/131897 International Application No.: PCT/US2016/067605
Publication Date: 03.08.2017 International Filing Date: 19.12.2016
IPC:
H01L 45/00 (2006.01) ,H01L 27/24 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24
including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
Applicants:
SANDISK TECHNOLOGIES LLC [US/US]; 6900 North Dallas Parkway Suite 325 Plano, Texas 75024, US
Inventors:
CHEN, Yangyin; US
PETTI, Christopher J.; US
HOU, Kun; US
Agent:
RADOMSKY, Leon; US
COHN, Joanna; US
CONNOR, David; US
GAUL, Allison; US
GAYOSO, Tony; US
GERETY, Todd; US
GILL, Matthew; US
GREGORY, Shaun D.; US
HANSEN, Robert; US
HUANG, Stephen; US
HYAMS, David; US
JOHNSON, Timothy; US
MAZAHERY, Benjamin; US
MURPHY, Timothy; US
NGUYEN, Jaqueline; US
O'BRIEN, Michelle; US
PARK, Byeongju; US
RUTT, Steven; US
SIMON, Phyllis; US
SULSKY, Martin; US
Priority Data:
15/228,21604.08.2016US
62/288,61629.01.2016US
Title (EN) VACANCY-MODULATED CONDUCTIVE OXIDE RESISTIVE RAM DEVICE INCLUDING AN INTERFACIAL OXYGEN SOURCE LAYER
(FR) DISPOSITIF DE RAM RÉSISTIVE À OXYDE CONDUCTEUR MODULÉ PAR LACUNE COMPRENANT UNE COUCHE DE SOURCE D'OXYGÈNE INTERFACIALE
Abstract:
(EN) A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.
(FR) L'invention concerne un dispositif de mémoire à accès aléatoire résistive (ReRAM) à oxyde conducteur modulé par lacune (VMCO) qui comprend au moins une couche interfaciale entre une partie semi-conducteur et une partie d'oxyde de titane d'un élément de mémoire résistive. L'au moins une couche interfaciale comprend un réservoir d'oxygène qui peut stocker des atomes d'oxygène pendant le fonctionnement de l'élément de mémoire résistive. L'au moins une couche interfaciale peut comprendre une couche interfaciale d'oxyde métallique, une couche métallique, et éventuellement, une couche de ruthénium.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP3375020