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1. (WO2017131643) STABLE THRESHOLD SWITCHING MATERIALS FOR SELECTORS OF RESISTIVE MEMORIES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/131643 International Application No.: PCT/US2016/014969
Publication Date: 03.08.2017 International Filing Date: 26.01.2016
IPC:
H01L 45/00 (2006.01) ,H01L 45/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Solid state travelling-wave devices
Applicants:
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070, US
Inventors:
JEON, Yoocharn; US
Agent:
PAGAR, Preetam; US
Priority Data:
Title (EN) STABLE THRESHOLD SWITCHING MATERIALS FOR SELECTORS OF RESISTIVE MEMORIES
(FR) MATÉRIAUX DE COMMUTATION À SEUIL STABLE POUR SÉLECTEURS DE MÉMOIRES RÉSISTIVES
Abstract:
(EN) A stable threshold switching material for selectors employed in resistive memories is provided. The material is amorphous and has a composition given by (V, Nb)1-x(Si, Hf, W)xOy, where 0 < x < 1 and y is within a range of 1.5 to 3.
(FR) La présente invention concerne un matériau de commutation à seuil stable pour des sélecteurs employés dans des mémoires résistives. Le matériau est amorphe et présente une composition fournie par (V, Nb)1-x(Si, Hf, W)xOy où 0 < x < 1 et y est compris de la plage de 1,5 à 3.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)